Structural and Optical Properties of Phase-Pure UO 2 , α-U 3 O 8 , and α-UO 3 Epitaxial Thin Films Grown by Pulsed Laser Deposition
Erik Enriquez,Gaoxue Wang,Yogesh Sharma,Ibrahim Sarpkaya,Qiang Wang,Di Chen,Nicholas Winner,Xiaofeng Guo,John Dunwoody,Joshua White,Andrew Nelson,Hongwu Xu,Paul Dowden,Enrique Batista,Han Htoon,Ping Yang,Quanxi Jia,Aiping Chen
DOI: https://doi.org/10.1021/acsami.0c08635
2020-07-15
Abstract:Fundamental understanding of the electronic, chemical, and structural properties of uranium oxides requires the synthesis of high-crystalline-quality epitaxial films of different polymorphs of one material or different phases with various oxygen valence states. We report the growth of single-phase epitaxial UO<sub>2</sub>, α-U<sub>3</sub>O<sub>8</sub>, and α-UO<sub>3</sub> thin films using pulsed laser deposition. Both oxygen partial pressure and substrate temperature play critical roles in determining the crystal structure of the uranium oxide films. X-ray diffraction and Raman spectroscopy demonstrate that the films are single phase with excellent crystallinity and epitaxially grown on a variety of substrates. Chemical valance states and optical properties of epitaxial uranium oxide films are studied by X-ray photoelectron spectroscopy and UV–vis spectroscopy, which further confirm the high-quality stoichiometric phase-pure uranium oxide thin films. Epitaxial UO<sub>2</sub> films show a direct band gap of 2.61 eV, while epitaxial α-U<sub>3</sub>O<sub>8</sub> and α-UO<sub>3</sub> films exhibit indirect band gaps of 1.89 and 2.26 eV, respectively. The ability to grow high-quality epitaxy actinide oxide thin films and to access their different phases and polymorphous will have significant benefits to the future applications in nuclear science and technology.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c08635?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c08635</a>.Experimental and calculated vibrational frequencies at the center of the Brillouin zone of UO<sub>2</sub>, α-U<sub>3</sub>O<sub>8</sub>, and α-UO<sub>3</sub>; band gap estimation of α-UO<sub>3</sub> thin films based on the linear extrapolation of the Tauc Plot of (α<i>h</i>ν)<sup>2</sup> versus <i>h</i>ν; and coordinates of the three α-UO<sub>3</sub> structures used in this work (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c08635/suppl_file/am0c08635_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology