Strain-induced speed-up of Mn$^{2+}$ spin-lattice relaxation in (Cd,Mn)Te/(Cd,Mg)Te quantum wells: a time-resolved ODMR study

Aleksander Bogucki,Aleksandra Łopion,Karolina Ewa Połczyńska,Wojciech Pacuski,Tomasz Kazimierczuk,Andrzej Golnik,Piotr Kossacki

2024-02-01

Abstract:This study examines the spin-lattice relaxation rate of Mn$^{2+}$ ions in strained diluted magnetic semiconductor (Cd,Mn)Te/(Cd,Mg)Te quantum wells using the optically detected magnetic resonance (ODMR) technique. By adjusting the magnesium (Mg) content in the buffer layer, we created samples with different strain levels. Our time-resolved ODMR results show that the spin-lattice relaxation time becomes faster as strain increases. We also found that the relaxation rate increases with both magnetic field and temperature, showing a power-law behavior. To understand these observations, we used a theoretical model based on six-level rate equations with non-equal level separations. This model suggests that the main factor affecting relaxation in our samples is a "direct" mechanism. The model's predictions match well with our experimental data. Overall, our findings give insights into spin-lattice relaxation in strained quantum wells and could be important for the development of future quantum and spintronic devices.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: to study the effect of strain on the spin - lattice relaxation rate of magnetic ions (Mn²⁺), especially in (Cd,Mn)Te/(Cd,Mg)Te quantum wells. Specifically, the author created samples with different strain levels by adjusting the magnesium (Mg) content in the buffer layer and measured the spin - lattice relaxation time of these samples using optically detected magnetic resonance (ODMR) technology.

### Main problems and research objectives

1. **Effect of strain on spin - lattice relaxation rate**:
- Study how strain affects the spin - lattice relaxation rate of Mn²⁺ ions in quantum wells.
- Explore whether the relaxation time becomes shorter when the strain increases.

2. **Effect of temperature and magnetic field on relaxation rate**:
- Analyze the effect of temperature and applied magnetic field on the spin - lattice relaxation rate and observe its power - law behavior.

3. **Verification of theoretical model**:
- Use a theoretical model based on the six - level rate equation to explain the experimental results and verify whether the "direct" mechanism is the main relaxation pathway.

### Experimental methods and results

- **Sample preparation**: Quantum well samples were prepared by molecular beam epitaxy (MBE) method. The magnesium content in the buffer layer and barrier layer was adjusted to introduce different strains.
- **ODMR measurement**: The spin - lattice relaxation time of Mn²⁺ ions was measured using time - resolved ODMR technology, and the relaxation curves under different strain, temperature and magnetic field conditions were recorded.
- **Numerical simulation**: A six - level model considering single - phonon scattering mechanism was constructed to simulate the relaxation process and compared with the experimental data.

### Key findings

- **Strain effect**: As the strain increases, the spin - lattice relaxation time of Mn²⁺ ions is significantly shortened.
- **Temperature and magnetic field dependence**: The relaxation rate increases with the increase of temperature and magnetic field, showing a power - law behavior.
- **Theoretical model matching**: The experimental results are consistent with the predictions of the theoretical model based on the six - level rate equation, indicating that the "direct" mechanism is the main relaxation pathway.

### Significance and applications

This research reveals the important effect of strain on spin - lattice relaxation, providing an important reference for the future design of quantum and spintronic devices. In particular, understanding how strain affects the relaxation process helps to optimize material properties and develop more efficient quantum information processing and storage devices.

### Formula summary

1. **Simplified spin Hamiltonian**:
\[
H = g_{\text{Mn}} \mu_B \mathbf{B} \cdot \mathbf{S} + D \left( S_z^2 - \frac{S(S + 1)}{3} \right)
\]
where \( g_{\text{Mn}} \) is the g - factor of manganese ions, \( \mu_B \) is the Bohr magneton, and \( D \) is the axial zero - field splitting parameter.

2. **Transition rate coefficient**:
\[
W_{ij}^{\uparrow} = A |j - i| (|E_j - E_i|)^3 \left( e^{\frac{|E_j - E_i|}{k_B T}} - 1 \right)^{-1}
\]
\[
W_{ji}^{\downarrow} = A |j - i| (|E_j - E_i|)^3 \left( 1 + e^{\frac{|E_j - E_i|}{k_B T}} \right)^{-1}
\]
where \( E_i \) is the energy of the \( i \) - th level, \( k_B T \) is the Boltzmann factor corresponding to the temperature \( T \), and \( A \) is a numerical constant.

3. **Energy interval**:
\[
\Delta E_{i + 1,i} = g_{\text{Mn}} \mu_B B + 2(i - 3)D
\]

These formulas and experimental results together reveal the key influence of strain on the spin - lattice relaxation rate, providing a solid foundation for further research and applications.