Abstract:We grew needle-shaped single crystals of GdAgGe, which crystallizes in a noncentrosymmetric hexagonal crystal structure with space group P$\overline{6}$2$m$ (189). The magnetic susceptibility data for $H \perp c$ reveal two pronounced antiferromagnetic transitions at $T_{N1}$ = 20 K and $T_{N2}$ = 14.5 K. The magnetic susceptibility anomalies are less prominent for $H \parallel c$. The transition at $T_{N1}$ is accompanied by a pronounced heat capacity anomaly confirming the bulk nature of the magnetic transition. Below $T_{N1}$, the electrical resistivity data follows a $T^{3/2}$ dependence. In the magnetically ordered state, GdAgGe shows positive transverse magnetoresistance, which increases with decreasing temperature and increasing field, reaching a value of $\sim$ 27% at 9 T and 10 K. The Hall resistivity data and electronic band structure calculations suggest that both the hole and electron charge carriers contribute to the transport properties. The electronic band structure displays linear band crossings near the Fermi level. The calculations reveal that GdAgGe has a nodal line with drumhead surface states coupled with a nonzero Berry phase, making it a nontrivial nodal-line semimetal.

What problem does this paper attempt to address?

The problems that this paper attempts to solve mainly focus on exploring the electronic structure and physical properties of the material GdAgGe, especially the interaction between its topological properties and magnetism. Specifically, the researchers focus on the following aspects: 1. **Crystal structure**: Determine the crystal structure of GdAgGe, including the space group and lattice parameters, as well as the growth conditions and morphological characteristics of single crystals. 2. **Magnetic properties**: By measuring the magnetic susceptibility in different directions of the magnetic field, study the magnetic transition temperatures of GdAgGe (such as TN1 = 20 K and TN2 = 14.5 K), and explore the nature of these transitions and their impact on the overall magnetism of the material. 3. **Thermodynamic properties**: Through heat capacity measurement, verify the bulk properties of magnetic transitions, and analyze the heat capacity data to understand the thermodynamic behavior of the material at different temperatures. 4. **Electrical transport properties**: Study the resistivity, Hall effect, and magnetoresistance characteristics of GdAgGe at different temperatures and magnetic fields to reveal the types and concentrations of charge carriers in the material, as well as the influence of the magnetically ordered state on electrical transport. 5. **Electronic structure**: Use density functional theory (DFT) to calculate the electronic band structure of GdAgGe, explore its topological properties, especially whether there are nodal lines and surface states, and how these topological features affect the physical properties of the material. Through the above research, the paper aims to comprehensively understand the physical characteristics and potential application values of GdAgGe as a potential topological material, especially in the combination of magnetic and topological properties. This will not only contribute to basic scientific research, but may also provide theoretical basis and technical support for the development of new functional materials.

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