Abstract:A global diabatization scheme, based on the ``valence-hole'' concept, has been previously applied to model webs of avoided-crosssings that exist in four electronic-state symmetry manifolds of C$_2$ ($^1\Pi_g$, $^3\Pi_g$, $^1\Sigma_u^+$, $^3\Sigma_u^+$). Here, this model is extended to the electronically excited states of four more molecules: CN ($^2\Sigma^+$), N$_2$ ($^3\Pi_u$), SiC ($^3\Pi$), and Si$_2$ ($^3\Pi_g$). Many strangenesses in the spectroscopic observations (e.g., energy level structure, predissociation linewidths, and radiative lifetimes) for all four electronic state systems discussed here are accounted for by this $unified$ model. The key concept of the model is valence-hole electron configurations: $3\sigma^24\sigma1\pi^45\sigma^2$ in CN, $2\sigma_g^22\sigma_u^11\pi_{u}^43\sigma_g^21\pi_{g}^1$ in N$_2$, $5\sigma^26\sigma7\sigma^22\pi^3$ in SiC, and $4\sigma_g^24\sigma_u^15\sigma_g^22\pi_{u}^3$ in Si$_2$. These valence-hole configurations have a nominal bond order of three or higher, and correlate with high-energy separated-atom limits with an np$\leftarrow$ns (n=2,3) promotion in $one$ of the atomic constituents. This promotion results in a triply-occupied ``valence-core" (i.e., $2\sigma_g^22\sigma_u^1$ or the equivalent). On its way to dissociation, the strongly-bound diabatic valence-hole state crosses multiple weakly-bound or repulsive states, which belong to electron configurations with a completely-filled valence-core. These curve-crossings between diabatic potentials result in a network of many avoided-crossings among multiple electronic states, analogous to the well-studied electronic structure landscape of ionic-covalent crossings in strongly ionic molecules. Considering the unique role of valence-hole states in shaping the global electronic structure, the valence-hole concept should be added to our intuitive framework of chemical bonding.

What problem does this paper attempt to address?

The problem that this paper aims to solve is to introduce the concept of "valence hole" and establish a global dihedralization model to explain and predict a series of complex spectroscopic properties of diatomic molecules in the electronic excited state. Specifically, the author attempts to explain many strange phenomena in the specific electronic state systems of the following four molecules through this model: 1. **CN (2Σ+)**: including phenomena in aspects such as energy level structure, predissociation line width, and radiative lifetime. 2. **N2 (3Πu)**: Similarly, these phenomena include the abnormality of the energy level structure, predissociation behavior, and the change of spectroscopic properties. 3. **SiC (3Π)**: These phenomena also involve the energy level structure, predissociation line width, and radiative lifetime. 4. **Si2 (3Πg)**: These phenomena also include the nonlinear dependence of the energy level structure, predissociation behavior, and the change of radiative lifetime. ### Key Concepts - **Valence - hole configuration**: This is the core concept of the model, referring to that in some electronic states, electrons are promoted from antibonding orbitals to a bonding orbital, forming a triply - occupied "valence core" (for example, the $2\sigma_g^2 2\sigma_u^1 1\pi_u^4 3\sigma_g^1 1\pi_g^1$ configuration in N2 (3Πu)). This configuration leads to the unique properties of these molecules in the electronic excited state. - **Curve crossing**: The crossing between the strongly - bound dihedral valence - hole state and multiple weakly - bound or repulsive states forms a network of multiple avoided crossings. These crossing points have a significant impact on the global structure of the electronic state. ### Application of the Model - **Explaining spectroscopic phenomena**: The model can explain various strange phenomena observed in the electronic excited state of the above - mentioned molecules, such as the abnormal shape of the energy level structure, the "rule - breaking" energy level structure, and the spectroscopic properties that are strongly dependent on R (nuclear separation). - **Predicting predissociation rates**: The model can also predict the predissociation rates of different vibrational states, which is crucial for understanding the dissociation dynamics of molecules. ### Methods - **Dihedralization model**: Analytic functions are introduced to model these dihedral potential energies, and empirical models are constructed using a small number of adjustable parameters and simple assumptions. These models can be fitted based on ab initio results or experimental observation data. - **Quantum - chemical calculations**: The multi - reference configuration interaction (MRCI) method and the complete active space self - consistent field (CASSCF) calculation are used to obtain the potential energy curves of the electronic states and verify the accuracy of the model. In conclusion, by introducing the concept of "valence hole", this paper provides a unified framework to understand and explain the complex spectroscopic phenomena of these diatomic molecules in the electronic excited state, thus filling the gap in the existing theories.

The diabatic valence-hole concept

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