Thermal conductivity of exfoliated and chemical vapor deposition-grown tin disulfide nanofilms: role of grain boundary conductance

Meng Zhang,Bo Zou,Xu Zhang,Yan Zhou,Huarui Sun

DOI: https://doi.org/10.1016/j.jallcom.2020.158119

IF: 6.2

2021-03-01

Journal of Alloys and Compounds

Abstract:<p>Tin disulfide (SnS₂) is a layered two-dimensional (2D) semiconductor material that shows great potentials in applications such as photodetectors, sensors, field-effect transistors, thermoelectric power generators, etc. The understanding of thermal transport in SnS₂ is important for the optimization of thermal management and energy transport and conversion processes in these devices. Here we compare the in-plane thermal conductivities of mechanically exfoliated single-crystalline and chemical vapor deposition (CVD)-grown polycrystalline SnS₂ nanofilms measured using the Raman optothermal technique. The polycrystalline SnS₂ film with a grain size of 250 nm has a low in-plane thermal conductivity of 4.8–5.6 W m⁻¹ K⁻¹, which is approximately half that of the single-crystalline SnS₂ film due to phonon scattering at the grain boundaries. The thermal transport across crystal grains is simulated using two approaches: (1) A finite element model with generated Voronoi cells, and (2) an empirical equation that takes into account the grain boundary thermal conductance (<em>G</em>′). The two approaches yield similar values for the effective <em>G</em>′, as well as consistent dependences of the in-plane thermal conductivity on the average grain size. It is predicted that the in-plane thermal conductivity of the polycrystalline SnS₂ film can be substantially reduced with finer grains. The results of this work offer a fundamental understanding of the thermal transport properties of single-crystalline and polycrystalline SnS₂ films from different growth methods, and demonstrate the potential to control the thermal conductivity of SnS₂ by tuning the grain size for future thermoelectric applications.</p>

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering