Abstract:Highlights • The thermoelectric performance of p-type half-metallic full-Heusler Mn 2 VAl was enhanced by introducing antisite defects and partial substitution. • First-principles calculations predicted that optimization of f AD and Si partial substitution increased the S of Mn 2 VAl. • Mn 2 VAl 1- x Si x polycrystalline samples with different f AD were successfully prepared. • Mn 2 VAl 0.96 Si 0.04 with f AD = 33 % achieved a maximum PF = 4.5×10 −4 W m −1 K −2 and a maximum zT = 3.4×10 −2 at 767 K. A half-metallic full-Heusler Mn 2 VAl alloy is a potential p-type thermoelectric material that can directly generate electricity from waste heat via the Seebeck effect. For practical use, the Seebeck coefficient S of Mn 2 VAl should be increased while maintaining a high electrical conductivity σ from its half-metallic character. Herein, we achieved this objective through antisite defect engineering. Theoretically, it was predicted that the S was maximized by regulating partial density of states of majority-spin sp-electrons through the control of the fraction of antisite defect, f AD , between V and Al atoms in Mn 2 VAl. Experimentally, a significant increase in S and a slight decrease in σ were observed for an Mn 2 VAl sample with an optimal f AD = 33 %, enhancing the thermoelectric power factor PF by 2.7 times from an Mn 2 VAl sample with f AD = 14 %. Furthermore, we combined the antisite defect engineering with a partial substitution method. An Mn 2 V(Al 0.96 Si 0.04 ) sample with f AD = 33 % exhibited the highest PF = 4.5×10 −4 W m −1 K −2 at 767 K among the samples. The maximum dimensionless figure-of-merit zT of the Mn 2 V(Al 0.96 Si 0.04 ) sample with f AD = 33 % was measured to be 3.4×10 −2 at 767 K, which is the highest among the p-type half-metallic full-Heusler alloys. Graphical abstract Download : Download high-res image (159KB) Download : Download full-size image

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