Abstract:The knowledge of Half-Heusler compounds have attracted much attention as materials for thermoelectric applications. In this work, we investigate, using first-principles calculations, the electronic, vibrational, and defect properties of TiXSn (X=Ni, Pd, Pt) half-Heusler compounds. The knowledge of such properties is vital for the understanding and improvement of thermoelectric transport properties of these materials. The band gap of the three compounds increase with the atomic number of the group 10 elements, in agreement with previous findings. The electronic effective masses of the three compounds are similar, while the heavy hole effective mass of TiPtSn is larger than those of the other two materials. Our calculations of the phonon dispersion included the calculation of the LO-TO splitting indicating that TiNiSn has a stronger ionic character and polar scattering of charge carriers by optical phonons in the case of low doping. Calculation of the formation energy of Ni interstitial defect in TiNiSn is very low, in agreement with previous results. Surprisingly, for the Pd interstitial in TiPdSn the formation energy is negative, suggesting that the full-Heusler structure can be more stable than the half-Heusler one. On the other hand, the formation energy of an interstitial in TiPtSn is significantly higher, suggesting smaller effects on both electronic structure and transport properties. The formation energy of all substitutional defects investigated are substantially higher than that of interstitial ones, suggesting that they should occur in very low concentrations.

What problem does this paper attempt to address?

The problems that this paper attempts to solve mainly focus on the research of the electronic, vibrational and defect properties of Half - Heusler (hH) compounds TiXSn (X = Ni, Pd, Pt). Specifically, the research objectives include: 1. **Electronic structure**: Through first - principles calculations, the electronic band structures of these three materials are explored, especially their band - gap sizes. It is found that the band - gaps of these materials increase with the increase of the atomic number of the Group 10 elements, which is consistent with previous research results. In addition, the effective masses of these materials are also analyzed, and it is found that the effective mass of heavy holes in TiPtSn is greater than that in the other two materials. 2. **Vibrational properties**: The phonon dispersion relations of these materials are calculated, including considering the LO - TO splitting effect. The research shows that TiNiSn has strong ionic characteristics, and the polar scattering between charge carriers and optical phonons is more significant in the case of low doping. 3. **Defect properties**: The formation energies of intrinsic defects (including interstitial and substitutional defects) in these materials are mainly studied. For TiNiSn, the formation energy of Ni interstitial defects is very low, which is consistent with previous findings. For TiPdSn, the formation energy of Pd interstitial defects is even negative, indicating that the full - Heusler structure may be more stable than the half - Heusler structure in this material. On the contrary, the formation energy of Pt interstitial defects in TiPtSn is relatively high, indicating that these defects have less influence on the electronic structure and transport properties of the material. 4. **Comprehensive analysis**: Through the above research, the aim is to deeply understand the thermoelectric transport properties of these materials and provide a theoretical basis for the design and synthesis of efficient thermoelectric materials. At the same time, the research also verifies some known properties of TiNiSn materials previously to ensure the reliability of the methods used. In general, this paper provides an important theoretical basis for understanding the performance of TiXSn (X = Ni, Pd, Pt) materials in thermoelectric applications by systematically studying their electronic, vibrational and defect properties.

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