Approaching the robust linearity in dual-floating van der Waals photodiode

Jinpeng Xu,Xiaoguang Luo,Xi Lin,Xi Zhang,Fan Liu,Yuting Yan,Siqi Hu,Mingwen Zhang,Nannan Han,Xuetao Gan,Yingchun Cheng,Wei Huang

DOI: https://doi.org/10.1002/adfm.202310811

2023-12-11

Abstract:Two-dimensional (2D) material photodetectors have gained great attention as potential elements for optoelectronic applications. However, the linearity of the photoresponse is often compromised by the carrier interaction, even in 2D photodiodes. In this study, we present a new device concept of dual-floating van der Waals heterostructures (vdWHs) photodiode by employing ambipolar MoTe2 and n-type MoS2 2D semiconductors. The presence of type II heterojunctions on both sides of channel layers effectively deplete carriers and restrict the photocarrier trapping within the channel layers. As a result, the device exhibits robust linear photoresponse under photovoltaic mode from the visible (405 nm) to near-infrared (1600 nm) band. With the built-in electric field of the vdWHs, we achieve a linear dynamic range of ~ 100 dB, responsivity of ~ 1.57 A/W, detectivity of ~ 4.28 * 10^11 Jones, and response speed of ~ 30 {\mu}s. Our results showcase a promising device concept with excellent linearity towards fast and low-loss detection, high-resolution imaging, and logic optoelectronics.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to achieve a robust linear photoelectric response in two - dimensional material photodetectors. Specifically, the researchers proposed a photodiode design based on double - floating van der Waals heterostructures (vdWHs). By using amphoteric MoTe₂ and n - type MoS₂ two - dimensional semiconductor materials to form an additional type - II heterojunction, carriers in the channel layer can be effectively depleted or transferred, thereby reducing the carrier trapping in the channel layer and achieving a robust linear photoelectric response from the visible light (405 nm) to the near - infrared (1600 nm) band.

The key contributions of the paper are as follows:
- **Linear photoelectric response**: Through the double - floating vdWHs structure, a linear photoelectric response from the visible light to the near - infrared band is achieved, with a linear dynamic range of about 100 dB.
- **High - performance parameters**: Under 532 nm illumination, the device exhibits a responsivity of about 1.57 A/W, a detectivity of about 4.28 × 10¹¹ Jones, and a response speed of about 30 μs.
- **Broad - band detection**: Through inter - layer excitation, the wavelength range of the photoelectric response is extended, covering a wide band from 405 nm to 1600 nm.
- **High - resolution imaging**: The application potential of this device in multi - band imaging is demonstrated, especially the advantages in terms of fast, broad - band and linear photoelectric response.

These results provide new ideas for designing high - performance two - dimensional material photodiodes, especially suitable for application scenarios requiring high linearity, fast response and broad - band detection, such as high - speed optical communication, high - resolution imaging and logic gate circuits.