Abstract:Long-period moiré superlattices at the twisted interface of van der Waals heterostructures relax into preferential-stacking domains separated by dislocation networks. Here, we develop a mesoscale theory for dislocations in the networks formed in twistronic bilayers with parallel (P) and antiparallel (AP) alignment of unit cells across the twisted interface. For P bilayers we find an exact analytical displacement field across partial dislocations and determine analytic dependences of energy per unit length and width on orientation and microscopic model parameters. For AP bilayers we formulate a semi-analytical approximation for displacement fields across perfect dislocations, establishing parametric dependences for their widths and energies per unit length. In addition, we find regions in parametric space of crystal thicknesses and moiré periods for strong and weak relaxation of moiré pattern in multilayered twistronic heterostructures.

What problem does this paper attempt to address?

This paper aims to solve the problem of dislocation networks formed by moiré superlattices in twistronic heterostructures, especially in two - dimensional material bilayer structures with small - angle twists. Specifically, the research focuses on: 1. **Formation mechanism of dislocation networks**: When moiré superlattices are formed at small - angle twist interfaces, how to minimize energy through dislocation networks, and how these dislocation networks convert moiré patterns into preferential stacking domains. 2. **Effects of different alignment methods**: The characteristics of dislocations and their effects on moiré superlattices under parallel (P) and antiparallel (AP) alignment methods are studied. For P bilayers, the authors found an exact analytical solution for partial dislocations; for AP bilayers, the authors proposed a semi - analytical approximation for perfect dislocations. 3. **Dependence of dislocation energy and width**: The dependence relationships between the energy and width of dislocations and the direction and microscopic model parameters are determined, which helps to understand the behavior of dislocations in the network. 4. **Relaxation conditions in multilayer structures**: The minimum periodic conditions required for moiré superlattices to relax into domain structures in multilayer twistronic heterostructures are explored, and strong and weak relaxation regions are distinguished. ### Specific problem descriptions - **Relaxation of moiré superlattices**: Long - period moiré superlattices will relax into preferential stacking domains separated by dislocation networks at small - angle twist interfaces. - **Dislocation characteristics**: The displacement fields, energy, and width of dislocations in P and AP bilayer structures are studied, especially the differences between partial and perfect dislocations. - **Relaxation conditions in multilayer structures**: Through energy balance analysis, the minimum periodic conditions required for moiré superlattices to relax into domain structures in multilayer structures are determined. ### Main contributions - **Theoretical model**: A mesoscale theoretical model is developed, which combines elastic theory and an inter - layer adhesion energy model to describe the behavior of dislocations. - **Analytical and approximate solutions**: An exact analytical solution is found for partial dislocations in P bilayers, and a semi - analytical approximation is proposed for perfect dislocations in AP bilayers. - **Application prospects**: The research results are of great significance for understanding the relaxation mechanism of moiré superlattices in two - dimensional materials and related physical phenomena (such as ferroelectric polarization switching). Through these studies, the authors hope to better understand and predict the dislocation behavior in twistronic heterostructures, thereby providing theoretical support for the design of new two - dimensional material devices.

Dislocations in twistronic heterostructures

Dislocations in twistronic heterostructures

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