Effect of Andreev Processes on the Goos-Hänchen (GH) shift in the Graphene-Superconductor-Graphene (GSG) junctions

Shahrukh Salim,Rahul Marathe,Sankalpa Ghosh

DOI: https://doi.org/10.1016/j.physe.2023.115858

2023-11-04

Abstract:In this article, we study the transport properties of Graphene-Superconductor-Graphene (GSG) heterojunction where the superconducting region is created in the middle of a graphene sheet, as contrasted to widely studied transport properties through a Superconductor-Graphene-Superconductor (SGS) type of Josephson junction. We particularly analyse in detail the Goos-Hänchen shift of the electron and the hole at the GS interface in such a junction, due to normal as well as Andreev reflection, using a transfer matrix-based approach. Additionally, we evaluate the normalised differential conductance as a function of bias voltage that characterises the transport through such junction and point out how they are influenced by Andreev and normal reflection. In the subsequent parts of the article we demonstrate how the GH shift for both electron and hole changes with the width of the superconducting region. The behavior of the differential conductance in such junctions as a function of the bias voltage in the region, dominated by Andreev and normal reflection, is also presented and analysed.

Mesoscale and Nanoscale Physics,Superconductivity,Optics

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is the influence of the Andreev process on the Goos - Hänchen (GH) shift in the graphene - superconductor - graphene (GSG) junction. Specifically, the researchers focused on:

1. **Analysis of GH shift**: The researchers analyzed in detail the GH shift of electrons and holes at the GS interface, which is caused by normal reflection and Andreev reflection. They used a transfer - matrix - based method to calculate these shifts.

2. **Transport properties**: The researchers evaluated the variation of the normalized differential conductance with the bias voltage, which characterizes the transport properties through such a junction, and pointed out how they are affected by Andreev reflection and normal reflection.

3. **Influence of the width of the superconducting region**: The researchers showed how the GH shift of electrons and holes changes with the change of the width of the superconducting region.

4. **Differential conductance behavior**: The researchers also showed and analyzed the behavior of the differential conductance with the bias voltage in the regions dominated by Andreev reflection and normal reflection.

### Specific problem description

#### 1. Physical background of GH shift
The Goos - Hänchen shift is an optical phenomenon. When a light beam undergoes total internal reflection at the interface of a medium, the reflected light beam will have a lateral shift along the direction of the incident plane. A similar phenomenon also occurs in electronic systems, especially at the graphene - superconductor interface.

#### 2. Uniqueness of GSG junction
Unlike the widely studied superconductor - graphene - superconductor (SGS) - type Josephson junction, the superconducting region in the GSG junction is located in the middle of the graphene sheet. This structure leads to different transport properties, especially showing a unique GH shift during the Andreev reflection process.

#### 3. Types of Andreev reflection
Three types of Andreev reflection are involved in the study:
- **Retro Andreev reflection (RAR)**: The incident particle and the reflected particle are in the same energy band.
- **Specular Andreev reflection (SAR)**: The incident electron and the reflected hole are in the opposite energy bands.
- **Normal reflection**: When the energy of the incident electron is greater than the superconducting energy gap, only the reflection of the single - particle state occurs.

#### 4. Research methods
The researchers established a theoretical model using the Dirac Bogoliubov - de Gennes (DBdG) Hamiltonian and calculated the reflection and transmission coefficients by solving the wave function. They also used the transfer - matrix method to handle the connection conditions between different regions, thus obtaining the expressions for the GH shift and the differential conductance.

### Conclusion
Through the above research, the authors revealed the unique characteristics of the GH shift in the GSG junction and the influence of Andreev reflection on the transport properties. These findings are helpful for understanding the electron transport mechanism in complex graphene - superconductor heterostructures and provide a theoretical basis for future research.