Abstract:The antiferromagnetic topological insulator has attracted lots of attention recently, as its intrinsic magnetism and topological property makes it a potential material to realize the quantum anomalous Hall effect (QAHE) at relative high temperature. Until now, only MnBi$_2$Te$_4$ is predicted and grown successfully. The other MB$_2$T$_4$-family materials predicted (MB$_2$T$_4$:M=transition-metal or rare-earth element, B=Bi or Sb, T=Te, Se, or S) with not only antiferromagnetic topological property but also rich and exotic topological quantum states and dynamically stable (or metastable) structure have not been realized on experiment completely. Here, MnBi$_2$Te$_4$ single crystals have been grown successfully and tested. It shows typical antiferromagnetic character, with Neel temperature of 24.5K and a spin-flop transition at H$\thickapprox$35000 Oe, 1.8K. After obtaining MnBi$_2$Te$_4$ single crystals, we have tried to synthesize the other members of MB$_2$T$_4$-family materials, but things are not going so well. Then it inspires us to discuss the growth mechanism of MnBi$_2$Te$_4$. The growth mode may be the layer-inserting growth mode based on symmetry, which is supported by our X-ray photoelectron spectroscopy (XPS) measurement. The XPS measurement combing with the $Ar^+$ ion sputtering is done to investigate the chemical state of MnBi$_2$Te$_4$. Binding energies (BE) of the MnBi$_2$Te$_4$-related contributions to Mn2p and Te3d spectra agree well with those of inserting material $\alpha$-MnTe. Rising intensity of the Mn2p satellite for divalent Mn (bound to chalcogen) with atomic number of ligand (from MnO to MnBi$_2$Te$_4$) has been observed, thus suggesting classification of MnBi$_2$Te$_4$ as the charge-transfer compound. Understanding the growth mode of MnBi$_2$Te$_4$ can help us to grow the other members of MB$_2$T$_4$-family materials.

Growth and characterization of the magnetic topological insulator candidate Mn$_2$Sb$_2$Te$_5$

Growth and characterization of the magnetic topological insulator candidate Mn2Sb2Te5

Crystal Growth and characterization of possible New Magnetic Topological Insulators FeBi2Te4

Antiferromagnetic Topological Insulator MnBi2Te4: Synthesis and Magnetic Properties.

The Layer-inserting Growth of Antiferromagnetic Topological Insulator MnBi$_2$Te$_4$ Based on Symmetry and Its X-ray Photoelectron Spectroscopy

Intrinsic magnetic topological insulator phases in the Sb doped MnBi2Te4 bulks and thin flakes

Coexistence of Ferromagnetism and Topology by Charge Carrier Engineering in the Intrinsic Magnetic Topological Insulator MnBi4Te7

Charge Carrier Mediation and Ferromagnetism Induced in MnBi6Te10 Magnetic Topological Insulators by Antimony Doping

Single crystal growth, chemical defects, magnetic and transport properties of antiferromagnetic topological insulators (Ge$_{1-δ-x}$Mn$_x$)$_2$Bi$_2$Te$_5$ ($x\leq 0.47$, $0.11 \leq δ\leq 0.20$)

Crystal and magnetic structures of magnetic topological insulators MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$

The modulation of magnetism and charge carrier in magnetic topological insulator MnBi4Te7 by Pb and Sb co-doping

Topological phase transition in layered magnetic compound MnSb2Te4: Spin-orbit coupling and interlayer coupling dependeces

Ferromagnetic (Sb2Te 3)1-x (MnSb2Te4)x Structures with High Curie Temperature Grown by Molecular Beam Epitaxy

Ubiquitous order-disorder transition in the Mn antisite sublattice of the (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_n$ magnetic topological insulators

Magnetotransport and angle-resolved photoemission spectroscopy of MnSb12Te19: a new member of MnSb2nTe3n+1family

Epitaxial Growth and Structural Characterizations of MnBi2Te4 Thin Films in Nanoscale

Experimental Realization of an Intrinsic Magnetic Topological Insulator

Evolution of the optical response of the magnetic topological insulators Mn(Bi$_{1-x}$Sb$_{x}$)$_2$Te$_4$ with Sb content

Ubiquitous Order-Disorder Transition in the Mn Antisite Sublattice of the (MnBi2Te4)(Bi2Te3)n Magnetic Topological Insulators

Layer-Number-Dependent Antiferromagnetic and Ferromagnetic Behavior in MnSb<sub>2</sub>Te<sub>4</sub>

Progress on the antiferromagnetic topological insulator MnBi<sub>2</sub>Te<sub>4</sub>