Magnetotransport Properties of Epitaxial Films and Hall Bar Devices of the Correlated Layered Ruthenate Sr$_3$Ru$_2$O$_7$

Prosper Ngabonziza,Anand Sharma,Anna Scheid,Sethulakshmi Sajeev,Peter A. van Aken,Jochen Mannhart
2024-03-19
Abstract:For epitaxial Sr$_3$Ru$_2$O$_7$ films grown by pulsed laser deposition, we report a combined structural and magnetotransport study of thin films and Hall bar devices patterned side-by-side on the same film. Structural properties of these films are investigated using X-ray diffraction and high-resolution transmission electron microscopy, and confirm that these films are epitaxially oriented and nearly phase pure. For magnetic fields applied along the $c-$axis, a positive magnetoresistance of 10\% is measured for unpatterned Sr$_3$Ru$_2$O$_7$ films, whereas for patterned Hall bar devices of channel widths of $10$ and $5\, \mu$m, magnetoresistance values of 40\% and 140\% are found, respectively. These films show switching behaviors from positive to negative magnetoresistance that are controlled by the direction of the applied magnetic field. The present results provide a promising route for achieving stable epitaxial synthesis of intermediate members of correlated layered strontium ruthenates, and for the exploration of device physics in thin films of these compounds.
Applied Physics,Strongly Correlated Electrons
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