Emergence of flat bands in the quasicrystal limit of boron nitride twisted bilayers

Lorenzo Sponza,Van Binh Vu,Elisa Serrano Richaud,Hakim Amara,Sylvain Latil

DOI: https://doi.org/10.1103/PhysRevB.109.L161403

2024-02-27

Abstract:We investigate the electronic structure and the optical absorption onset of close-to-30\degree twisted hexagonal boron nitride bilayers. Our study is carried out with a purposely developed tight-binding model validated against DFT simulations. We demonstrate that approaching 30\degree (quasicrystal limit), all bilayers sharing the same moiré supercell develop identical band structures, irrespective of their stacking sequence. This band structure features a bundle of flat bands laying slightly above the bottom conduction state which is responsible for an intense peak at the onset of the absorption spectrum. These results suggest the presence of strong, stable and stacking-independent excitons in boron nitride 30\degree-twisted bilayers. By carefully analyzing the electronic structure and its spatial distribution, we elucidate the origin of these states as moiré-induced K-valley scattering due to interlayer B$-$B coupling. We take advantage of the the physical transparency of the tight-binding parameters to derive a simple triangular model based on the B sublattice that accurately describes the emergence of the bundle. Being our conclusions very general, we predict that a similar bundle should emerge in other close-to-30{\degree} bilayers, like transition metal dichalcogenides, shedding new light on the unique potential of 2D materials.

Materials Science,Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The paper primarily investigates the electronic structure and the onset of optical absorption characteristics of twisted bilayer hexagonal boron nitride (hBN) near a twist angle of 30 degrees (quasicrystalline limit). The study employs a specially designed tight-binding model to simulate and validate the results of Density Functional Theory (DFT) calculations, finding that all bilayer structures sharing the same moiré superlattice exhibit the same band structure when the twist angle approaches 30 degrees, regardless of their stacking order. Within this band structure, there exists a set of flat bands located just above the bottom of the conduction band, leading to strong peaks in the absorption spectrum.

The emergence of these flat bands is associated with strong, stable excitons that are independent of stacking and originate from interlayer B-B coupling-induced moiré effect valley scattering. Through careful analysis of the electronic structure and its spatial distribution, researchers have revealed the physical origin of these states and developed a simple triangular model based on the B sublattice, which can accurately describe the formation of the flat band bundles.

The study's conclusions are universal, predicting that similar phenomena will also occur in other bilayer materials with twist angles close to 30 degrees, such as transition metal dichalcogenides, offering a new perspective on the unique potential of two-dimensional materials. In summary, the paper demonstrates that twisted bilayer hexagonal boron nitride near a 30-degree twist could host strong excitonic phenomena, stemming from the emergence of flat band bundles, and independent of stacking order. The geometric origin of this phenomenon is expected to produce similar bundle structures in the quasicrystals of other two-dimensional materials like transition metal dichalcogenides, potentially affecting their excitonic properties in a similar way.