Perfect Coulomb drag in a dipolar excitonic insulator

Phuong X. Nguyen,Liguo Ma,Raghav Chaturvedi,Kenji Watanabe,Takashi Taniguchi,Jie Shan,Kin Fai Mak

2023-09-26

Abstract:Excitonic insulators (EIs), arising in semiconductors when the electron-hole binding energy exceeds the band gap, are a solid-state prototype for bosonic phases of matter. Unlike the charged excitations that are frozen and unable to transport current, the neutral electron-hole pairs (excitons) are free to move in EIs. However, it is intrinsically difficult to demonstrate exciton transport in bulk EI candidates. The recently emerged dipolar EIs based on Coulomb-coupled atomic double layers open the possibility to realize exciton transport across the insulator because separate electrical contacts can be made to the electron and hole layers. Here we show that the strong interlayer excitonic correlation at equal electron and hole densities in the MoSe2/WSe2 double layers separated by a 2-nm barrier gives rise to perfect Coulomb drag. A charge current in one layer induces an equal but opposite drag current in the other. The drag current ratio remains above 0.9 up to about 20 K for low exciton densities. As exciton density increases above the Mott density, the excitons dissociate into the electron-hole plasma abruptly, and only weak Fermi liquid frictional drag is observed. Our experiment moves a step closer to realizing exciton circuitry and superfluidity.

Mesoscale and Nanoscale Physics,Materials Science,Strongly Correlated Electrons

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to realize and verify the "perfect" Coulomb drag phenomenon in the excitonic insulator (EI) in the molybdenum disulfide/tungsten diselenide (MoSe₂/WSe₂) bilayer structure. Specifically, the researchers hope to show that in this new material system, when the electron and hole densities are equal, the charge current in one layer can induce an equal but oppositely - directed drag current in the other layer, and this drag effect is almost ideal at low temperatures. In addition, the paper also explores the mechanism of the transition from the excitonic insulator to the metallic state, especially the phenomena near the Mott density.

### Main research contents:

1. **Realization of excitonic insulator**:
- The researchers utilized the MoSe₂/WSe₂ bilayer structure and adjusted the electron and hole densities by applying gate voltages and bias voltages to form the excitonic insulator.
- By measuring the tunneling capacitance and the inter - layer capacitance, the existence region of the excitonic insulator was determined.

2. **Observation of Coulomb drag effect**:
- In the excitonic insulator region, the researchers observed the "perfect" Coulomb drag phenomenon, that is, the driving current in one layer can induce an equal but oppositely - directed drag current in the other layer.
- The drag - current ratio (\( \frac{I_{\text{drag}}}{I_{\text{drive}}} \)) is close to 1 at low temperatures, indicating the dominant role of excitonic transport.

3. **Transition from excitonic insulator to metallic state**:
- By measuring the drag resistance, the researchers observed the transition from the excitonic insulator to the metallic state, which occurs near the Mott density.
- The effects of temperature and excitonic pair density on the drag resistance were analyzed, and it was found that the variation laws of the drag resistance with temperature and density are consistent with theoretical predictions.

### Formula explanations:

- **Tunneling capacitance and inter - layer capacitance**:
- The measurements of the tunneling capacitance \( C_P \) and the inter - layer capacitance \( C_I \) are used to determine the electron and hole densities and the excitonic compressibility.
- The relationship between \( C_P \) and \( C_I \) can be expressed by the following formula:
\[
C_P = \int \frac{C_I}{e} dV_b
\]

- **Drag - current ratio**:
- The expression of the drag - current ratio \( \frac{I_{\text{drag}}}{I_{\text{drive}}} \) is:
\[
\left| \frac{J_h}{J_e} \right| \approx \frac{\sigma_X + \sigma_D}{\sigma_X + \sigma_e + (\det \Sigma) R_{WC}}
\]
- At low temperatures and low excitonic densities, it can be simplified to:
\[
\left| \frac{J_h}{J_e} \right| \approx \frac{1}{1 + \frac{R_{WC}}{R_{\text{drag}}}}
\]

- **Estimation of free - carrier density**:
- The free - carrier density is estimated using the Saha equation:
\[
\frac{n_e^2}{n_X} = \frac{k_B T}{2 \pi \hbar^2 / m^*} e^{-\epsilon_b / k_B T}
\]
- Here, \( n_e \) is the free - electron density, \( n_X \) is the excitonic density, \( m^* \) is the excitonic effective mass, and \( \epsilon_b \) is the excitonic binding energy.

### Conclusion:

This research successfully demonstrated the "perfect" Coulomb drag phenomenon in the excitonic insulator realized in the MoSe₂/WSe₂ bilayer structure and revealed the transition mechanism from the excitonic insulator to the metallic state. These results provide important experimental and theoretical supports for the future development of circuits and superfluids based on excitonic transport.