Abstract:Determining the symmetry breaking order of correlated quantum phases is essential for understanding the microscopic interactions in their host systems. The flat bands in magic angle twisted bilayer graphene (MATBG) provide an especially rich arena to investigate such interaction-driven ground states, and while progress has been made in identifying the correlated insulators and their excitations at commensurate moire filling factors, the spin-valley polarizations of the topological states that emerge at high magnetic field remain unknown. Here we introduce a new technique based on twist-decoupled van der Waals layers that enables measurements of their electronic band structure and, by studying the backscattering between counter-propagating edge states, determination of relative spin polarization of the their edge modes. Applying this method to twist-decoupled MATBG and monolayer graphene, we find that the broken-symmetry quantum Hall states that extend from the charge neutrality point in MATBG are spin-unpolarized at even integer filling factors. The measurements also indicate that the correlated Chern insulator emerging from half filling of the flat valence band is spin-unpolarized, but suggest that its conduction band counterpart may be spin-polarized. Our results constrain models of spin-valley ordering in MATBG and establish a versatile approach to study the electronic properties of van der Waals systems.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the spin - valley polarization characteristics of correlated insulators and topological states in magic - angle twisted bilayer graphene (MATBG). Specifically, the researchers hope to determine the symmetry - broken quantum Hall states extending from the charge neutral point under high magnetic fields and the spin - polarization states of Chern Insulators (ChIs) associated with half - filled flat bands. By introducing a technique based on twisted - decoupled van der Waals layers, they are able to measure the electronic band structure and determine the relative spin - polarization of edge modes by studying the back - scattering between counter - propagating edge states. ### Main problems: 1. **Spin - valley polarization characteristics**: Determine the spin - valley polarization states of symmetry - broken quantum Hall states and Chern Insulators (ChIs) in magic - angle twisted bilayer graphene (MATBG). 2. **Technical method**: Develop a technique based on twisted - decoupled van der Waals layers to determine the spin - polarization state by measuring the electronic band structure and studying the back - scattering of edge states. ### Solutions: - **Technical means**: Use the twisted - decoupled van der Waals layer technique to realize electrically decoupled MATBG and monolayer graphene (MLG) subsystems. - **Experimental design**: By adjusting the carrier density and displacement field, study the resistance changes at different filling factors, thereby inferring the spin - polarization state. - **Data analysis**: Utilize longitudinal and non - local resistance measurements, combined with theoretical models, to determine the spin - polarization of edge states. ### Main findings: - **Spin - polarization of quantum Hall states**: At even integer filling factors, the symmetry - broken quantum Hall states are spin - unpolarized. - **Spin - polarization of Chern Insulators**: The Chern Insulator of the half - filled flat band is spin - unpolarized, while the Chern Insulator corresponding to its conduction band may be spin - polarized. These findings are helpful for in - depth understanding of the microscopic interactions and symmetry - breaking mechanisms in magic - angle twisted bilayer graphene, and provide an important reference for future theoretical and experimental research.

Uncovering the spin ordering in magic-angle graphene via edge state equilibration

Spin skyrmion gaps as signatures of strong-coupling insulators in magic-angle twisted bilayer graphene

Spin-orbit coupling-enhanced valley ordering of malleable bands in twisted bilayer graphene on WSe2

$SU(4)$ Valley + Spin Fluctuation Interference Mechanism for Nematic Order in Magic Angle Twisted Bilayer Graphene: Impact of Vertex Corrections

Origin of the Magic Angle in Twisted Bilayer Graphene from Hybridization of Valence and Conduction Bands

Topological phases, van Hove singularities, and spin texture in magic-angle twisted bilayer graphene in the presence of proximity-induced spin-orbit couplings

Competing Correlated States and Abundant Orbital Magnetism in Twisted Monolayer-Bilayer Graphene

Mapping the twist-angle disorder and Landau levels in magic-angle graphene

Correlated Insulator Behaviour at Half-Filling in Magic Angle Graphene Superlattices

Spin-Polarized Nematic Order, Quantum Valley Hall States, and Field-Tunable Topological Transitions in Twisted Multilayer Graphene Systems

Spectroscopic Evidence for a Spin- and Valley-Polarized Metallic State in a Nonmagic-Angle Twisted Bilayer Graphene

Imaging inter-valley coherent order in magic-angle twisted trilayer graphene

On the Hartree-Fock Ground State Manifold in Magic Angle Twisted Graphene Systems

Strongly correlated Hofstadter subbands in minimally twisted bilayer graphene

Tunable spin-polarized correlated states in twisted double bilayer graphene

Twisted bilayer graphene reveals its flat bands under spin pumping

Imaging Electronic Correlations in Twisted Bilayer Graphene near the Magic Angle

Spin-orbit–driven ferromagnetism at half moiré filling in magic-angle twisted bilayer graphene

Strongly interacting Hofstadter states in magic-angle twisted bilayer graphene

Flat bands, electron interactions and magnetic order in magic-angle mono-trilayer graphene

Topological Flat Bands and Correlated States in Twisted Monolayer-Bilayer Graphene