Abstract:Spin qubit systems are one of the promising candidates for quantum computing. The quantum dot (QD) arrays are intensively investigated by many researchers. Because the energy-difference between the up-spin and down-spin states is very small, the detection of the qubit state is of prime importance in this field. Moreover, many wires are required to control qubit systems. Therefore, the integration of qubits and wires is also an important issue. In this study, the measurement process of QD arrays is theoretically investigated using resonant tunneling, controlled by a conventional transistor. It is shown that the number of possible measurements during coherence time can exceed a hundred under the backaction of the measurements owing to the nonlinear characteristics of resonant tunneling. It is also discussed to read out the measurement results by the conventional transistor.

What problem does this paper attempt to address?

### What problem does this paper attempt to solve? This paper aims to solve the measurement problems in the silicon spin - qubit system. Specifically, the research focuses on: 1. **Improving measurement efficiency**: Since the energy difference between the spin - up and spin - down states is very small, detecting the state of the qubit becomes crucial. The paper proposes a measurement method based on the resonant tunneling effect to enhance the measurement efficiency through non - linear characteristics. 2. **Reducing the destruction of coherence by measurement**: During the measurement process, the measurement itself may have an impact on the coherence of the qubit (i.e., measurement back - action). The paper explores how to use the non - linear characteristics of resonant tunneling to perform multiple measurements within the coherence time, thereby reducing the impact of this back - action. 3. **Integrating qubits with traditional CMOS circuits**: In order to achieve a more compact design and simplify control, it is necessary to directly integrate the qubit system with traditional complementary metal - oxide - semiconductor (CMOS) circuits on the same chip. The paper studies how to achieve this by connecting quantum - dot (QD) arrays and traditional transistors. ### Research background - **Silicon quantum computers**: Silicon quantum computers are a hot topic in the fields of quantum physics and engineering. Inheriting the tradition of integrated circuit technology, the silicon qubit system is expected to be widely used in the future. - **Quantum - dot (QD) arrays**: Currently, one - dimensional qubit arrays have been successfully fabricated. Silicon qubits use narrowly - bound carriers, and their interactions are dominated by short - range spin - spin interactions. As the distance between two qubits increases, the exchange coupling decays exponentially, so the control of distant qubits becomes more difficult. - **Wiring complexity**: Each qubit requires about five or more wires for control, which makes the wiring structure very compact. Additional mechanisms (such as shuttling qubits or dielectric electrons) must be considered to connect distant qubits. ### Main contributions - **Theoretical model**: The paper proposes a side - quantum - dot (side - QD) system model including Zeeman splitting and conducts a detailed analysis using the Green's function method. - **Measurement mode**: The current characteristics in four different qubit states are studied, and it is shown how to distinguish these states by adjusting the energy level of the central quantum dot. - **Experimental feasibility**: Through numerical simulation, it is verified that the proposed measurement method can perform more than 100 measurements within the coherence time, providing the possibility for future surface coding. ### Formula summary 1. **Hamiltonian**: \[ H=\sum_{s}\sum_{i = 1}^{3}E_{i}s d_{i}^{\dagger}d_{i}+\sum_{\alpha = L,R}\sum_{k_{\alpha},s}E_{k_{\alpha}s}c_{k_{\alpha}s}^{\dagger}c_{k_{\alpha}s}+\sum_{\alpha = L,R}\sum_{k_{\alpha},s}[V_{k_{\alpha},s,2}c_{k_{\alpha}s}^{\dagger}d_{2s}+V_{k_{\alpha}s}^{*}d_{2s}^{\dagger}c_{k_{\alpha}s}]+2\sum_{i = 1}^{2}\sum_{s}W_{i,i + 1}(d_{i}^{\dagger}d_{i+1,s}+h.c.) \] 2. **Tunnel coupling coefficient**: \[ \Gamma_{\alpha,s}(\omega)=2\pi\sum_{k_{\alpha}}|V_{k_{\alpha},s}|^{2}\delta(\omega - E_{k_{\alpha}s}) \] 3. **Current expression**: \[ I_{D}=\frac{e^{2}}{h}\int d\omega T_{2s}(\omega)[f_{S}(\omega)-f_{D}(\omega)]

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