Disorder-induced linear magnetoresistance in Al$_2$O$_3$/SrTiO$_3$ heterostructures

Gao Kuang Hong,Lin Tie,Ma Xiao Rong,Li Qiu Lin,Li Zhi Qing

2024-01-06

Abstract:An unsaturated linear magnetoresistance (LMR) has attracted widely attention because of potential applications and fundamental interest. By controlling growth temperature, we realized a metal-to-insulator transition in Al2O3/SrTiO3 heterostructures. The LMR is observed in metallic samples with electron mobility varying over three orders of magnitude. The observed LMR cannot be explained by the guiding center diffusion model even in samples with very high mobility. The slope of the observed LMR is proportional to Hall mobility, and the crossover field, indicating a transition from quadratic (at low fields) to linear (at high fields) field dependence, is proportional to the inverse Hall mobility. This signifies that the classical model is valid to explain the observed LMR. More importantly, we develop an analytical expression according to the effective-medium theory that is equivalent to the classical model. And the analytical expression describes the LMR data very well, confirming the validity of the classical model.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the origin and mechanism of the linear magnetoresistance (LMR) realized in the Al₂O₃/SrTiO₃ heterostructure. Specifically, the author achieved the transition from metal to insulator by controlling the growth temperature and observed the linear magnetoresistance phenomenon in a wide range of electron mobilities. The main research contents include:

1. **Experimental background**:
- Linear magnetoresistance (LMR) has received extensive attention due to its potential applications and technological interests.
- By controlling the growth temperature, the author achieved the transition from metal to insulator in the Al₂O₃/SrTiO₃ heterostructure and observed linear magnetoresistance in different mobility ranges.

2. **Comparison of theoretical models**:
- Quantum model: The quantum model proposed by Abrikosov explains the non - saturated linear magnetoresistance that occurs when the lowest Landau level is occupied under a strong magnetic field.
- Classical model: The classical model proposed by Parish et al. believes that the strong disorder effect is the key to achieving significant linear magnetoresistance, and this model is suitable for explaining the linear magnetoresistance in high - mobility materials.
- Guiding - center diffusion model: For high - mobility materials, a semi - classical guiding - center diffusion model has been proposed, but this model cannot explain the experimental results in some cases.

3. **Experimental results and analysis**:
- A series of high - quality Al₂O₃/SrTiO₃ heterostructures were prepared by magnetron sputtering, and their linear magnetoresistance in a wide range of mobilities (3444 - 130,841 cm²V⁻¹s⁻¹) was observed.
- The experimental results show that the slope of the linear magnetoresistance is proportional to the Hall mobility, and the cross - field is proportional to the reciprocal of the Hall mobility, indicating that the classical model can effectively explain the observed linear magnetoresistance.
- Further, an analytical expression was derived using the effective medium theory (EMT), which can fit the experimental data well and further verify the validity of the classical model.

4. **Conclusion**:
- Through experimental and theoretical analysis, this study has proved that the classical model can explain the linear magnetoresistance observed in the Al₂O₃/SrTiO₃ heterostructure, even in the case of very high mobility.
- The study also reveals the important influence of disorder effects on linear magnetoresistance and proposes possible disorder sources (such as uneven distribution of oxygen vacancies).

In summary, this paper aims to reveal the origin and the underlying physical mechanism of the linear magnetoresistance in the Al₂O₃/SrTiO₃ heterostructure through experimental and theoretical analysis, providing new insights for understanding this phenomenon.