Abstract:Utilizing strong exchange splitting in isotropic magnetic material, magnetic field‐induced insulator‐to‐metal transition accompanied by gigantic, isotropic magnetoresistance is realized in a pristine material for the first time in a layered compound, holding great promise to revolutionize device technologies. Magnetotransport, the response of electrical conduction to external magnetic field, acts as an important tool to reveal fundamental concepts behind exotic phenomena and plays a key role in enabling spintronic applications. Magnetotransport is generally sensitive to magnetic field orientations. In contrast, efficient and isotropic modulation of electronic transport, which is useful in technology applications such as omnidirectional sensing, is rarely seen, especially for pristine crystals. Here a strategy is proposed to realize extremely strong modulation of electron conduction by magnetic field which is independent of field direction. GdPS, a layered antiferromagnetic semiconductor with resistivity anisotropies, supports a field‐driven insulator‐to‐metal transition with a paradoxically isotropic gigantic negative magnetoresistance insensitive to magnetic field orientations. This isotropic magnetoresistance originates from the combined effects of a near‐zero spin–orbit coupling of Gd3+‐based half‐filling f‐electron system and the strong on‐site f–d exchange coupling in Gd atoms. These results not only provide a novel material system with extraordinary magnetotransport that offers a missing block for antiferromagnet‐based ultrafast and efficient spintronic devices, but also demonstrate the key ingredients for designing magnetic materials with desired transport properties for advanced functionalities.

Room temperature reversible colossal volto-magnetic effect in all-oxide metallicmagnet/topotactic-phase-transition material heterostructures

Nonvolatile Electrical Control Of 2d Cr2ge2te6 And Intrinsic Half Metallicity In Multiferroic Hetero-Structures

Large unidirectional spin Hall and Rashba-Edelstein magnetoresistance in topological insulator/magnetic insulator heterostructures

Deterministic Switching of Perpendicular Magnetic Anisotropy by Voltage Control of Spin Reorientation Transition in (Co/pt)(3)/pb(mg1/3nb2/3)o-3-pbtio3 Multiferroic Heterostructures

Optically Induced Phase Change for Magnetoresistance Modulation

Interfacial Charge-Mediated Non-Volatile Magnetoelectric Coupling in Co0.3Fe0.7/Ba0.6Sr0.4TiO3/Nb:SrTiO3 Multiferroic Heterostructures

Room-temperature giant magnetotranstance effect in single-phase multiferroics

Charged Domain Wall and Polar Vortex Topologies in a Room-Temperature Magnetoelectric Multiferroic Thin Film

Room Temperature Single-Component Organic Multiferroics with Large Magnetoelectric Coupling: Proficient Approach for Stray-Magnetic Field Harvesting

Ferroelectrically Controlled Topological Magnetic Phase in a Janus-magnet-based Multiferroic Heterostructure

Magnetization Switching Through Giant Spin–orbit Torque in a Magnetically Doped Topological Insulator Heterostructure

Electric-Field Switching of Magnetic Topological Charge in Type-I Multiferroics

Electric control of magnetism at room temperature

Insulator-to-Metal Transition and Isotropic Gigantic Magnetoresistance in Layered Magnetic Semiconductors

Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure

Insulator‐to‐Metal Transition and Isotropic Gigantic Magnetoresistance in Layered Magnetic Semiconductors

Electric-Field Control of Perpendicularly Magnetized Ferrimagnetic Order and Giant Magnetoresistance in Multiferroic Heterostructures

Room-temperature large magnetoelectricity in a transition metal doped ferroelectric perovskite

Giant Electrical Modulation of Magnetization in Co40Fe40B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(011) Heterostructure.

Magnetic phase control by an electric field

Large unidirectional spin Hall and Rashba−Edelstein magnetoresistance in topological insulator/magnetic insulator heterostructures