Quantum transport regimes in quartic dispersion materials with Anderson disorder

Mustafa Polat,Hazan Özkan,Hâldun Sevinçli
2023-08-04
Abstract:Mexican-hat-shaped quartic dispersion manifests itself in certain families of single-layer twodimensional hexagonal crystals such as compounds of groups III-VI and groups IV-V as well as elemental crystals of group V. Quartic band forms the valence band edge in various of these structures, and some of the experimentally confirmed structures are GaS, GaSe, InSe, SnSb and blue phosphorene. Here, we numerically investigate strictly-one-dimensional (1D) and quasi-one dimensional (Q1D) nanoribbons with quartic dispersion and systematically study the effects of Anderson disorder on their transport properties with the help of a minimal tight-binding model and Landauer formalism. We compare the analytical expression for the scaling function with simulation data to deduce about the domains of diffusion and localization regimes. In 1D, it is shown that conductance drops dramatically at the quartic band edge compared to a quadratic band. As for the Q1D nanoribbons, a set of singularities emerge close to the band edge, which suppress conductance and lead to short mean-free-paths and localization lengths. Interestingly, wider nanoribbons can have shorter mean-free-paths because of denser singularities. However, the localization lengths do not necessarily follow the same trend. The results display the peculiar effects of quartic dispersion on transport in disordered systems.
Disordered Systems and Neural Networks,Mesoscale and Nanoscale Physics,Materials Science
What problem does this paper attempt to address?
The paper primarily explores the quantum transport properties of materials with quartic dispersion under the influence of Anderson disorder. Specifically, the study focuses on the quantum transport behavior in strictly one-dimensional (1D) and quasi-one-dimensional (Q1D) nanoribbons. ### Research Background and Motivation - **Quartic Dispersion Materials**: These materials exhibit unique electronic structures, particularly a quartic dispersion relation with a Mexican hat shape at the valence band edge. These materials include III-VI and IV-V compounds as well as monolayer 2D crystals of group V elements. - **Experimental Progress**: Various monolayer or few-layer structures of quartic dispersion materials have been successfully synthesized, and their unique properties have been reported, such as GaS, GaSe, InSe, blue phosphorene, and SnSb. - **Theoretical and Computational Needs**: Despite experimental progress, there is still limited research on the transport properties of these materials in the presence of disorder. Specifically, the impact of Anderson disorder on the transport properties of these materials has not been fully explored. ### Main Research Content - **Computational Model**: A minimal tight-binding model was used to simulate the electronic structure of these materials, and the non-equilibrium Green's function method was employed to study quantum transport. - **System Types**: Two types of systems were studied—strictly 1D systems (such as atomic chains) and Q1D systems (such as nanoribbons). - **Effect of Anderson Disorder**: By introducing Anderson disorder, the impact of different disorder strengths on conductivity was studied. - **Key Findings**: - In 1D systems, conductivity significantly decreases at the quartic dispersion band edge, showing more drastic changes compared to the quadratic dispersion band. - In Q1D nanoribbons, a series of singularities appear, leading to suppressed conductivity and shorter mean free paths and localization lengths. - Wider nanoribbons may have shorter mean free paths due to higher singularity density. - Localization lengths do not always follow the same trend. ### Conclusion Through numerical simulations, this paper reveals the unique impact of Anderson disorder on the quantum transport properties of quartic dispersion materials, especially in 1D and Q1D systems. These results are significant for understanding the electronic properties of such materials and their future applications in nanoelectronics and optoelectronics.