Microwave low-noise AlGaAs/InGaAs HBT's with p/sup +/-regrown base contacts

H. Dodo,Y. Amamiya,T. Niwa,M. Mamada,N. Goto,H. Shimawaki
DOI: https://doi.org/10.1109/55.663534
IF: 4.8157
1998-04-01
IEEE Electron Device Letters
Abstract:This paper reports low-noise AlGaAs/InGaAs heterojunction bipolar transistors (HBT's) with p/sup +/-regrown base contacts. To reduce the thermal and shot noises, we have reduced R/sub B/ by using a p/sup +/-regrown base contact and have reduced /spl tau//sub B/ by using a compositionally-graded thin base layer. As a result, F/sub min/ values of 0.9, 1.1, 1.2, and 1.6 dB were obtained at 2, 6, 12, and 18 GHz, respectively. These low-noise characteristics of our HBT's show high potential for low-noise application.
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