Beyond-adiabatic Quantum Admittance of a Semiconductor Quantum Dot at High Frequencies: Rethinking Reflectometry as Polaron Dynamics

L. Peri,G. A. Oakes,L. Cochrane,C. J. B. Ford,M. F. Gonzalez-Zalba

DOI: https://doi.org/10.22331/q-2024-03-21-1294

2024-03-19

Abstract:Semiconductor quantum dots operated dynamically are the basis of many quantum technologies such as quantum sensors and computers. Hence, modelling their electrical properties at microwave frequencies becomes essential to simulate their performance in larger electronic circuits. Here, we develop a self-consistent quantum master equation formalism to obtain the admittance of a quantum dot tunnel-coupled to a charge reservoir under the effect of a coherent photon bath. We find a general expression for the admittance that captures the well-known semiclassical (thermal) limit, along with the transition to lifetime and power broadening regimes due to the increased coupling to the reservoir and amplitude of the photonic drive, respectively. Furthermore, we describe two new photon-mediated regimes: Floquet broadening, determined by the dressing of the QD states, and broadening determined by photon loss in the system. Our results provide a method to simulate the high-frequency behaviour of QDs in a wide range of limits, describe past experiments, and propose novel explorations of QD-photon interactions.

Mesoscale and Nanoscale Physics,Quantum Physics

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is to develop a self - consistent quantum master - equation formalism in order to obtain the effective admittance of semiconductor quantum dots (QD) operating at high frequencies (microwave frequencies). Specifically, the authors focus on the situation when the quantum dots are tunnel - coupled to charge reservoirs (CR) and are influenced by coherent photon oscillators.

### Main Problems and Background

1. **Modeling High - Frequency Behavior**:
Semiconductor quantum dots are the basis of many quantum technologies, such as quantum sensors and computers. Therefore, it becomes crucial to simulate their performance in larger electronic circuits. Existing models perform well under low - frequency and weak - driving conditions, but have limitations under high - frequency and strong - driving conditions.

2. **New Physical Mechanisms**:
The authors propose a new method to describe the interaction between quantum dots and photons, especially the behavior at high frequencies. They introduce two new photon - mediated mechanisms: Floquet broadening and broadening caused by photon loss.

3. **Beyond the Adiabatic Approximation**:
Traditional semiclassical models cannot accurately describe the behavior of quantum dots under high - frequency driving or short - lifetime conditions because the time - energy uncertainty principle is violated in these cases. The authors restore the Heisenberg uncertainty principle by reinterpreting reflectometry as polariton dynamics.

### Specifically Solved Problems

- **Admittance Expression**:
The authors derive a general admittance expression that not only covers the known classical thermal limit but also includes new mechanisms such as lifetime broadening, power broadening, Floquet broadening, and photon - loss broadening.

- **Understanding of Physical Mechanisms**:
By describing the interaction between quantum dots and photon oscillators as polaritons, the authors provide a novel and insightful physical understanding of this process. In particular, they show how tunneling events can be achieved by creating or annihilating polaritons.

- **Experimental Verification and Application**:
This research not only describes past experimental results but also proposes new ways to explore quantum - dot - photon interactions, providing a theoretical basis for future research.

### Summary

This paper solves the problem of effective admittance modeling of semiconductor quantum dots under high - frequency driving by introducing a new theoretical framework and reveals new physical mechanisms. This provides important theoretical support for understanding and designing more complex quantum - electronic devices.