Abstract:Understanding the mechanical and thermodynamic properties of transition-metal dichalcogenides (TMDs) and their heterostructures is pivotal for advancing the development of flexible semiconductor devices, and molecular dynamics (MD) simulation is widely applied to study these properties. However, current uncertainties persist regarding the efficacy of empirical potentials in MD simulations to accurately describe the intricate performance of complex interfaces within heterostructures. This study addresses these challenges by developing an interatomic potential based on deep neural networks and first-principles calculations. Specifically focusing on MoS2/WS2 heterostructures, our approach aims to predict Young's modulus and thermal conductivities. The potential's effectiveness is demonstrated through the validation of structural features, mechanical properties, and thermodynamic characteristics, revealing close alignment with values derived from first-principles calculations. A noteworthy finding is the substantial influence of the load direction on Young's modulus of heterostructures. Furthermore, our results highlight that the interfacial thermal conductance of the MoS2/WS2 heterostructures is considerably larger than that of graphene-based interfaces. The potential developed in this work facilitates large-scale material simulations, bridging the gap with first-principles calculations. Notably, it outperforms empirical potentials under interface conditions, establishing its significant competitiveness in simulation computations. Our approach not only contributes to a deeper understanding of TMDs and heterostructures but also presents a robust tool for the simulation of their mechanical and thermal behaviors, paving the way for advancements in flexible semiconductor device manufacturing.

Anisotropic Interlayer Force Field for Group-VI Transition Metal Dichalcogenides

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Accurate force-field methodology capturing atomic reconstructions in transition metal dichalcogenide moiré systems

The dynamics of copper intercalated molybdenum ditelluride

Composition Dependence of the Charge Driven Phase Transition in Group-VI Transition Metal Dichalcogenides

Electronic, optical and transport properties of van der Waals Transition-metal Dichalcogenides Heterostructures: A First-principle Study

First-principles-based machine learning interatomic potential for molecular dynamics simulations of 2D lateral MoS2/WS2 heterostructures

Realistic tight-binding model for monolayer transition metal dichalcogenides in 1T' structure

Precise structure and energy of group 6 transition metal dichalcogenide homo- and heterobilayers in high-symmetry configurations

Tuning electronic properties in transition metal dichalcogenides MX$_2$ (M= Mo/W, X= S/Se) heterobilayers with strain and twist angle

Anisotropic Ordering in 1T' Molybdenum and Tungsten Ditelluride Layers Alloyed with Sulfur and Selenium

Theoretical Study of Interfacial and Electronic Properties of Transition Metal Dichalcogenides and Organic Molecules Based Van Der Waals Heterostructures

Anisotropic Interlayer Force Field for Two-Dimensional Hydrogenated Carbon Materials and Their Heterostructures

Theoretical Analysis of a Two-Dimensional Metallic/Semiconducting Transition-Metal Dichalcogenide NbS2//WSe2 Hybrid Interface

Mo6S3Br6: an Anisotropic 2D Superatomic Semiconductor

Structural Characterization and Functional Assessment of Exchange-Correlation Functionals in van der Waals TMDs AB2 (A = Mo, W; B = S, Se, Te)

Quantifying van der Waals Interactions in Layered Transition Metal Dichalcogenides from Pressure-Enhanced Valence Band Splitting

Metal-insulator transition in transition metal dichalcogenide heterobilayer: accurate treatment of interaction

Electronic structures, charge transfer and charge orders in twisted transition metal dichalcogenide bilayers