Coexistence of Logarithmic and SdH Quantum Oscillations in Ferromagnetic Cr-doped Tellurium Single Crystals

Shu-Juan Zhang,Lei Chen,Shuang-Shuang Li,Ying Zhang,Jian-Min Yan,Fang Tang,Yong Fang,Lin-Feng Fei,Weiyao Zhao,Julie Karel,Yang Chai,Ren-Kui Zheng

DOI: https://doi.org/10.1088/1361-648X/acc5ca

2023-07-18

Abstract:We report the synthesis of transition-metal-doped ferromagnetic elemental single-crystal semiconductors with quantum oscillations using the physical vapor transport method. The 7.7 atom% Cr-doped Te crystals (Cr_Te) show ferromagnetism, butterfly-like negative magnetoresistance in the low temperature (< 3.8 K) and low field (< 0.15 T) region, and high Hall mobility, e.g., 1320 cm2 V-1 s-1 at 30 K and 350 cm2 V-1 s-1 at 300 K, implying that Cr_Te crystals are ferromagnetic elemental semiconductors. When B // c // I, the maximum negative MR is -27% at T = 20 K and B = 8 T. In the low temperature semiconducting region, Cr_Te crystals show strong discrete scale invariance dominated logarithmic quantum oscillations when the direction of the magnetic field B is parallel to the [100] crystallographic direction and show Landau quantization dominated Shubnikov-de Haas (SdH) oscillations for B // [210] direction, which suggests the broken rotation symmetry of the Fermi pockets in the Cr_Te crystals. The findings of coexistence of multiple quantum oscillations and ferromagnetism in such an elemental quantum material may inspire more study of narrow bandgap semiconductors with ferromagnetism and quantum phenomena.

Materials Science

What problem does this paper attempt to address?

The paper mainly addresses the following issues:

1. **Successful Doping**: Researchers successfully doped transition metal chromium (Cr) into narrow-bandgap semiconductor tellurium (Te) single crystals using the physical vapor transport method, achieving a doping concentration of 7.7 atomic% Cr:Te single crystals.

2. **Ferromagnetism and Quantum Oscillations**: At low temperatures (<3.8 K), Cr:Te single crystals exhibit ferromagnetism and butterfly-shaped negative magnetoresistance effects. Additionally, the material shows different quantum oscillation modes under different magnetic field directions:
- When the magnetic field is parallel to the [100] crystal direction, logarithmic periodic quantum oscillations are observed;
- When the magnetic field is parallel to the [210] crystal direction, Shubnikov-de Haas (SdH) oscillations are observed.

3. **Anisotropy of Quantum Oscillations**: By rotating the magnetic field direction, researchers found that quantum oscillations exhibit quasi-60° rotational symmetry, and this phenomenon can be explained by the symmetry of the crystal structure.

4. **Negative Magnetoresistance Effect**: When the magnetic field is parallel to the current direction (i.e., B//[001]), a significant negative magnetoresistance effect is observed, with a maximum value of about -27%. This effect is particularly pronounced at lower temperatures and varies with the direction of the magnetic field.

5. **Carrier Properties**: Through Hall effect measurements, researchers determined the hole-dominated electron transport characteristics and calculated the variation of carrier density and mobility with temperature.

In summary, this study demonstrates the possibility of successfully achieving ferromagnetic doping in elemental semiconductor tellurium, providing new insights for further exploration of narrow-bandgap semiconductors with ferromagnetic and quantum phenomena.