A pr 2 01 8 Pressure effects on the electronic properties of the undoped superconductor
N. Barbero,S. Holenstein,T. Shang,Z. Shermadini,F. Lochner,I. Eremin,C. Wang,G.-H. Cao,R. Khasanov,H.-R. Ott,J. Mesot,T. Shiroka
2018-01-01
Abstract:N. Barbero,1, ∗ S. Holenstein,2, 3 T. Shang,2, 4 Z. Shermadini,2 F. Lochner,5, 6 I. Eremin,6 C. Wang,7 G.-H. Cao,8, 9 R. Khasanov,2 H.-R. Ott,1, 2 J. Mesot,1, 2 and T. Shiroka1, 2 1Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zurich, Switzerland Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland Physik-Institut der Universität Zürich, Wintherturerstrasse 190, CH-8057, Zürich, Switzerland Institute of Condensed Matter Physics, EPFL Lausanne, CH-1015 Lausanne, Switzerland Max-Planck-Institut für Eisenforschung, D-40237 Düsseldorf, Germany 6Theoretische Physik III, Ruhr-Universität, D-44801 Bochum, Germany 7Department of Physics, Shandong University of Technology, Zibo 255049, China Department of Physics and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China