Sub-micron Esaki Tunnel Diode fabrication and characterization

D. Pawlik,B. Romanczyk,E. Freeman,P. Thomas,M. Barth,S. Rommel,Z. Cheng,J. Li,J. Park,J. Hydrick,J. Fiorenza,Anthony Lochtefeld

DOI: https://doi.org/10.1109/ISDRS.2009.5378135

2009-12-01

Abstract:Recently much effort has been made in characterizing and realizing tunneling field effect transistors (TFET). Fundamental to the operation of such devices is the direct band-to-band tunneling of carriers from the n++ source to the p++ drain, which is the same current transport mechanism of Esaki Tunnel Diodes (ETD). Therefore, ETDs are an effective way to understand the potential of TFETs for high speed, low power applications. Recently, Rommel, et al. [1] reported on record breaking GaAs/InGaAs ETDs fabricated on Si substrates, with additional analysis by Pawlik, et al. [2]. However, these studies have been performed on large size devices with junction areas in excess of 5 μm2. Few studies of sub-micron ETDs have been performed [3], which is critical for integration of TFETs into modern VLSI/UVLSI circuits. This abstract reports on the fabrication and characterization of sub-micron GaAs/InGaAs ETDs on a Si substrate with junction areas below 0.1 μm2.