Abstract:Spin defects in van der Waals materials offer a promising platform for advancing quantum technologies. Here, we propose and demonstrate a powerful technique based on isotope engineering of host materials to significantly enhance the coherence properties of embedded spin defects. Focusing on the recently-discovered negatively charged boron vacancy center ($\mathrm{V}_{\mathrm{B}}^-$) in hexagonal boron nitride (hBN), we grow isotopically purified $\mathrm{h}{}^{10}\mathrm{B}{}^{15}\mathrm{N}$ crystals. Compared to $\mathrm{V}_{\mathrm{B}}^-$ in hBN with the natural distribution of isotopes, we observe substantially narrower and less crowded $\mathrm{V}_{\mathrm{B}}^-$ spin transitions as well as extended coherence time $T_2$ and relaxation time $T_1$. For quantum sensing, $\mathrm{V}_{\mathrm{B}}^-$ centers in our $\mathrm{h}{}^{10}\mathrm{B}{}^{15}\mathrm{N}$ samples exhibit a factor of $4$ ($2$) enhancement in DC (AC) magnetic field sensitivity. For additional quantum resources, the individual addressability of the $\mathrm{V}_{\mathrm{B}}^-$ hyperfine levels enables the dynamical polarization and coherent control of the three nearest-neighbor ${}^{15}\mathrm{N}$ nuclear spins. Our results demonstrate the power of isotope engineering for enhancing the properties of quantum spin defects in hBN, and can be readily extended to improving spin qubits in a broad family of van der Waals materials.

Robust Nuclear Spin Polarization via Ground-State Level Anti-Crossing of Boron Vacancy Defects in Hexagonal Boron Nitride

Robust Nuclear Spin Polarization via Ground-State Level Anticrossing of Boron Vacancy Defects in Hexagonal Boron Nitride

Nuclear spin polarization and control in hexagonal boron nitride

Intrinsic high-fidelity spin polarization of charged vacancies in hexagonal boron nitride

Robust external spin hyperpolarization of quadrupolar nuclei enabled by strain

Isotopic control of the boron-vacancy spin defect in hexagonal boron nitride

Exploring the Properties of the V_B^- Defect in hBN: Optical Spin Polarization, Rabi Oscillations, and Coherent Nuclei Modulation

Manipulating the Charge State of Spin Defects in Hexagonal Boron Nitride

Isotope engineering for spin defects in van der Waals materials

Laser Direct Writing of Visible Spin Defects in Hexagonal Boron Nitride for Applications in Spin-Based Technologies

Single nuclear spin detection and control in a van der Waals material

Coherent control of an ultrabright single spin in hexagonal boron nitride at room temperature

Coherent dynamics of multi-spin V$${}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ center in hexagonal boron nitride

Optically-active spin defects in few-layer thick hexagonal boron nitride

Synchronous manipulation of nuclear spins via boron vacancy centers in hexagonal boron nitride

Coherent dynamics of strongly interacting electronic spin defects in hexagonal boron nitride

Greatly Enhanced Emission from Spin Defects in Hexagonal Boron Nitride Enabled by a Low-Loss Plasmonic Nanocavity

Femtosecond Laser Writing of Spin Defects in Hexagonal Boron Nitride

Extending the coherence of spin defects in hBN enables advanced qubit control and quantum sensing

Generation of Spin Defects by Ion Implantation in Hexagonal Boron Nitride

Engineering spin defects in hexagonal boron nitride