Abstract:Topologically protected surface current is highly promising for next-generation low-dissipation and disorder-tolerant quantum electronics and computing. Yet, electric transport from the co-existing bulk state dominates the responses of the Dirac surface state, especially at elevated temperatures relevant to technological applications. Here, we present an approach that convincingly showcases the generation, disentanglement, and precise control of enduring surface charge carriers on a topological insulator, Bi2Se3, with high bulk conductivity, all achieved at room temperature. By using pump–probe modulation spectroscopy under ultrabroadband driving tunable from 4 meV to 1.55 eV, we show the terahertz (THz) field-induced surface carriers by discovering their initial temporal responses dominant over high density trivial bulk carriers. Strikingly, the response of the induced surface carrier responses persists for more than ∼5 ps and is enhanced by reducing pump photon energy. The dynamics and lifetime of the distinct surface response manifest themselves as the enhanced THz pump-induced THz transmission, which directly correlates with the transient negative THz conductivity. Increasing the THz driving field reduces the induced surface carrier lifetime and identifies, particularly, an optimal pump field of Es ∼ 224 kV cm−1 for generating the dominant surface response relative to the bulk. This surface carrier dominant regime is suppressed by a joint effect of enhanced surface-bulk scattering and a more rapid saturation of surface excitation compared to the bulk that sets in above Es. The controllability of room temperature topologically surface carriers through pump photon energy offer compelling possibilities for extending this approach to other topological complex materials.

Room temperature wavelike exciton transport in a van der Waals superatomic semiconductor

Theory of Acoustic Polarons in the Two-Dimensional SSH Model Applied to the Layered Superatomic Semiconductor Re6Se8Cl2

Coexistence of Incoherent and Ultrafast Coherent Exciton Transport in a Two-Dimensional Superatomic Semiconductor

Switching of the electron-phonon interaction in 1 T − VSe 2 assisted by hot carriers

Room-temperature electrical control of exciton flux in a van der Waals heterostructure

Ultra-thin van der Waals crystals as semiconductor quantum wells

Room Temperature Terahertz Electroabsorption Modulation by Excitons in Monolayer Transition Metal Dichalcogenides

Unusual Exciton-Phonon Interactions at van der Waals Engineered Interfaces

Velocity Scanning Tomography for Room-Temperature Quantum Simulation

Valley phonons and exciton complexes in a monolayer semiconductor

Ultrafast Electronic Dynamics in Anisotropic Indirect Interlayer Excitonic States of Monolayer WSe2/ReS2 Heterojunctions.

Room temperature persisting surface charge carriers driven by intense terahertz electric fields in a topological insulator Bi2Se3

Robust Room Temperature Valley Hall Effect of Interlayer Excitons

Room temperature polariton spin switches based on Van der Waals superlattices

Motional narrowing, ballistic transport, and trapping of room-temperature exciton polaritons in an atomically-thin semiconductor

Chiral Phonon, Valley Polarization, and Inter/Intravalley Scattering in a van der Waals ReSe 2 Semiconductor

Ultrafast Electronic Dynamics in Anisotropic Indirect Interlayer Excitonic States of Monolayer WSe 2 /ReS 2 Heterojunctions

Anisotropic phonon-mediated electronic transport in chiral Weyl semimetals

Transient Superdiffusion of Energetic Carriers in Transition Metal Dichalcogenides Visualized by Ultrafast Pump-Probe Microscopy

Room temperature Tamm-Plasmon Exciton-Polaritons with a WSe2 monolayer