High temperature, gate-free quantum anomalous Hall effect with an active capping layer

Hee Taek Yi,Deepti Jain,Xiong Yao,Seongshik Oh
DOI: https://doi.org/10.1021/acs.nanolett.3c01313
2023-06-07
Abstract:Quantum anomalous Hall effect (QAHE) was discovered a decade ago, but is still not utilized beyond a handful of research groups, due to numerous limitations such as extremely low temperature, electric field-effect gating requirement, small sample sizes and environmental aging effect. Here, we present a robust platform that provides effective solutions to these problems. Specifically, on this platform, we observe QAH signatures at record high temperatures, with the Hall conductance of 1.00 e2/h at 2.0 K, 0.98 e2/h at 4.2 K, and 0.92 e2/h at 10 K, on centimeter-scale substrates, without electric-field-effect gating. The key ingredient is an active CrOx capping layer, which substantially boosts the ferromagnetism while suppressing environmental degradation. With this development, QAHE will now be accessible to much broader applications than before.
Mesoscale and Nanoscale Physics,Materials Science
What problem does this paper attempt to address?
This paper attempts to solve several key limiting problems in the practical applications of the Quantum Anomalous Hall Effect (QAHE). Specifically, these problems include: 1. **Extremely low working temperature**: In the past, achieving QAHE usually required extremely low temperatures (< 100 mK), which severely limited its feasibility in practical applications. By introducing an active CrO_x capping layer, the paper successfully observed QAHE at relatively high temperatures. For example, Hall conductances of 1.00 e^2/h, 0.98 e^2/h and 0.92 e^2/h were observed at 2.0 K, 4.2 K and 10 K respectively. 2. **No need for electric - field - effect gating**: Traditional QAHE experiments usually require external electric - field - effect gating to adjust the Fermi level, which increases the complexity and cost of the experiment. The platform proposed in the paper can achieve QAHE without using electric - field - effect gating, thus simplifying the experimental conditions. 3. **Small sample size**: Previous QAHE studies were mostly limited to microscopic samples, which limited its application in macroscopic devices. The sample size used in the paper reached the centimeter level, significantly improving its practicality. 4. **Environmental aging effect**: QAHE materials are prone to degradation when exposed to air, affecting their long - term stability. By using an active CrO_x capping layer, the paper significantly improved the material's resistance to environmental aging, enabling QAHE materials to maintain good performance over a long period of time. Through these improvements, the paper paves the way for the practical application of QAHE, enabling it to be applied in a wider range of fields, such as quantum computing, low - power - consumption electronic devices, etc.