Abstract:Domain walls (DWs) in magnetic nanowires are promising candidates for a variety of applications including Boolean/unconventional logic, memories, in-memory computing as well as magnetic sensors and biomagnetic implementations. They show rich physical behaviour and are controllable using a number of methods including magnetic fields, charge and spin currents and spin-orbit torques. In this review, we detail types of domain walls in ferromagnetic nanowires and describe processes of manipulating their state. We look at the state of the art of DW applications and give our take on the their current status, technological feasibility and challenges.

What problem does this paper attempt to address?

The problems that this paper attempts to solve mainly focus on the types, manipulation methods and applications of domain walls (DWs) in magnetic nanowires. Specifically: 1. **Types of domain walls**: The paper describes in detail the existence forms of different types of magnetic domain walls in ferromagnetic nanowires, including head - to - head (H2H) and tail - to - tail (T2T) domain walls in in - plane magnetized nanowires, as well as Néel - type and Bloch - type domain walls in perpendicularly magnetized nanowires. These domain walls have different structures and characteristics, which affect their behaviors in nanowires. 2. **Manipulation process of domain walls**: The paper explores multiple methods for manipulating the states of domain walls, including using magnetic fields, charges and spin - polarized currents, and spin - orbit torques. In particular, the paper discusses how to control the position and movement of domain walls through geometric defects (such as grooves, protrusions, etc.), and how to achieve more precise control by using external stimuli (such as voltage, strain, etc.). 3. **Applications of domain walls**: The paper summarizes multiple applications of magnetic domain walls in nanowires, covering multiple fields from memories to sensors and then to computing devices. For example, domain walls are used to develop new non - volatile memories (such as MRAM), and for Boolean and non - Boolean logic computations (such as neuromorphic computing and reservoir computing). In addition, domain walls are also applied in magnetic field sensors, biomedical sensing and other fields. ### Main problems - **Improving the controllability and stability of domain walls in magnetic nanowires**: By studying different types of domain walls and their manipulation methods, the paper aims to improve the controllability and stability of domain walls in nanowires to meet the requirements of practical applications. - **Exploring new application fields**: The paper not only reviews existing applications but also looks forward to possible new applications in the future, especially potential applications in information processing, sensing technology and biomedical fields. ### Formula example When discussing the movement of domain walls, the paper mentions the Landau - Lifshitz - Gilbert (LLG) equation, which is used to describe the time evolution of the magnetization intensity \( \mathbf{M} \): \[ \frac{d\mathbf{M}}{dt}=\mu_0\gamma(\mathbf{M}\times\mathbf{H}_{\text{eff}})+\alpha\left(\mathbf{M}\times\frac{d\mathbf{M}}{dt}\right) \] where: - \( \mu_0 \) is the permeability of vacuum, - \( \gamma \) is the gyromagnetic ratio of electrons, - \( \mathbf{H}_{\text{eff}} \) is the effective magnetic field acting on the magnetization intensity, - \( \alpha \) is the Gilbert damping parameter. Through this equation, the dynamic behaviors of magnetic domain walls under different conditions can be better understood.

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