Study of Synchronous RF Pulsing in Dual Frequency Capacitively Coupled Plasma

Abhishek Verma,Shahid Rauf,Kallol Bera,D. Sydorenko,A. Khrabrov,I. Kaganovich
2023-05-25
Abstract:Low-pressure multi-frequency capacitively coupled plasmas are used for numerous etch and deposition applications in the semiconductor industry. Pulsing of the radio-frequency (RF) sources enables control of neutral and charged species in the plasma on a millisecond timescale. The synchronous (i.e., simultaneous, in-phase) pulsing of both power sources in a dual frequency capacitively coupled plasma is examined in this article. Due to the low gas pressure, modeling has been done using the electrostatic Particle-in-cell/Monte Carlo collision method. The objective of this work is to investigate the sensitivity of the plasma properties to small changes in timing during synchronous pulsing of the 2 RF sources. It is demonstrated that small deviations in the on and off times of the 2 RF sources can lead to major changes in the plasma characteristics. This high sensitivity is of concern for process repeatability but can be utilized to enable better control of the dynamics of plasma-surface interaction. In the simulations, the pulsing parameters (on and off times and ramp rates) are varied and the temporal evolution of plasma characteristics such as electron density (ne), species current at the electrode, and electron temperature are examined. It is demonstrated that if the low-frequency (LF) source is turned off a few {\mu}s before (or after) the high-frequency source, ne during the off-state is significantly higher (or lower) due to the frequency coupling effect. Similarly, turning on the LF source with a small delay results in a sharp increase in the plasma density when the RF sources are turned on.
Plasma Physics
What problem does this paper attempt to address?
This paper aims to study the influence of synchronous radio - frequency pulsing on the characteristics of plasma in dual - frequency capacitively coupled plasma (DF - CCP). Specifically, the paper explores the sensitivity of the plasma properties to small delays in the on - and off - times of high - frequency (HF) and low - frequency (LF) power supplies during the synchronous pulsing process. Through these studies, the author hopes to understand how these small delays affect key parameters such as electron density, electron temperature in the plasma, and species current on the electrodes, and to explore the challenges that this sensitivity brings to process repeatability and chamber matching, as well as the possibility of using these delays to more precisely control plasma dynamics. ### Main research contents: 1. **Definition of synchronous pulsing**: Synchronous pulsing refers to the situation where the high - frequency and low - frequency power supplies are turned on and off simultaneously. 2. **Fine - tuning of pulse parameters**: Small delays in the on - or off - times of the high - and low - frequency power supplies (\(\Delta \tau_{\text{off}}\) and \(\Delta \tau_{\text{on}}\)) are introduced in the study, and the effects of these delays on the plasma characteristics are examined. 3. **Simulation method**: The particle - in - cell/Monte Carlo collision (PIC/MCC) method is used for simulation. 4. **Result analysis**: - **Changes in electron density and temperature**: The plasma behavior under different delay conditions is observed through the time - varying spatially - averaged electron density and temperature. - **Changes in current on the electrodes**: The electron and ion currents on the electrodes are analyzed to understand the plasma - surface interaction in different pulse modes. ### Key findings: - **Frequency - coupling effect**: When the low - frequency power supply is turned off a few microseconds before the high - frequency power supply, the electron density in the off - state increases significantly; conversely, when the low - frequency power supply is turned off after the high - frequency power supply, the electron density decreases significantly. - **Influence in the startup phase**: When the low - frequency power supply is turned on a few microseconds after the high - frequency power supply, the plasma density will increase rapidly. - **Influence of the voltage ramp rate**: The ramp rate of the voltage during the on - and off - processes has a minor impact on the plasma characteristics. ### Conclusion: The paper points out that small delays in the on - and off - times of high - and low - frequency power supplies in synchronous radio - frequency pulsing have a significant impact on the plasma characteristics. This high sensitivity not only brings challenges to process repeatability and chamber matching but also provides a new means for more finely controlling plasma dynamics. These findings are of great significance for optimizing plasma processing in semiconductor manufacturing.