Abstract:Harnessing topological phases with their dissipationless edge-channels coupled with the effective engineering of quantum phase transitions is a spinal aspect of topological electronics. The accompanying symmetry protection leads to different kinds of topological edge-channels which include, for instance, the quantum spin Hall phase, and the spin quantum anomalous Hall phase. To model realistic devices, it is important to ratify the robustness of the dissipationless edge-channels, which should typically exhibit a perfect quantum of conductance, against various disorder and dephasing. This work is hence devoted to a computational exploration of topological robustness against various forms of dephasing. For this, we employ phenomenological dephasing models under the Keldysh non-equilibrium Green's function formalism using a model topological device setup on a 2D-Xene platform. Concurrently, we also explicitly add disorder via impurity potentials in the channel and averaging over hundreds of configurations. To describe the extent of robustness, we quantify the decay of the conductance quantum with increasing disorder under different conditions. Our analysis shows that these topological phases are robust to experimentally relevant regimes of momentum dephasing and random disorder potentials. We note that Rashba mixing worsens the performance of the QSH phase and point out a mechanism for the same. Further, we observe that the quantum spin Hall phase break downs due to spin dephasing, but the spin quantum anomalous Hall phase remains robust. The spin quantum anomalous Hall phase shows stark robustness under all the dephasing regimes, and shows promise for realistic device structures for topological electronics applications.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: **Are topological phases immune to decoherence?**
Specifically, the research focuses on exploring the robustness of the quantum spin Hall (QSH) phase and the spin - quantum anomalous Hall (SQAH) phase under different forms of decoherence (including momentum decoherence and spin decoherence). To achieve this goal, the authors used the Keldysh non - equilibrium Green's function (NEGF) method, introduced different decoherence mechanisms in a model device on a 2D - Xene platform, and analyzed the influence of these mechanisms on topological phases through numerical simulation.
### Research Background
Topological insulators (TIs) are a class of quantum matter states with dissipation - free edge states. These edge states are insensitive to backscattering due to symmetry protection. However, in practical applications, these topological phases need to face various forms of disorder and decoherence effects. Therefore, it is necessary to study in detail the influence of these effects on their robustness.
### Research Content
1. **Influence of Momentum Decoherence and Disorder Potential**:
- The authors introduced momentum decoherence through the NEGF method and combined it with a random impurity potential for simulation.
- The results show that the QSH phase exhibits extremely strong robustness to momentum decoherence and disorder potential in the absence of Rashba interaction. Even under high - disorder conditions, the decrease in conductivity is only about 0.05%.
- When the Rashba interaction is introduced, the performance of the QSH phase decreases, but it still maintains good robustness under reasonable experimental conditions.
- For the SQAH phase, its robustness to momentum decoherence and disorder potential is more significant, and the decrease in conductivity is very small.
2. **Influence of Spin Decoherence**:
- The authors further studied the influence of spin decoherence on the QSH and SQAH phases.
- The results show that the QSH phase performs poorly under spin decoherence, and the conductivity decreases significantly to nearly zero.
- In contrast, the SQAH phase exhibits extremely strong robustness to spin decoherence. Even under large decoherence intensity, the decrease in conductivity is very limited.
3. **Influence Mechanism of Rashba Interaction**:
- The Rashba interaction leads to the formation of spin texture on the Fermi surface, which may cause spin - flip of left - moving electrons during momentum decoherence, thus affecting the robustness of the QSH phase.
- In the SQAH phase, because the edge states are chiral and not affected by spin - flip, its robustness is stronger.
### Conclusion
This research shows that the QSH phase exhibits good robustness under momentum decoherence and disorder potential, but its performance decreases significantly under spin decoherence; while the SQAH phase exhibits extremely strong robustness to all forms of decoherence, showing potential in practical device applications.
Through these studies, the authors not only revealed the influence of different decoherence mechanisms on topological phases, but also provided theoretical basis and technical support for the future design of practical devices based on topological electronics.