Abstract:We consider a superlattice formed by tunnel-connected identical holes, periodically placed in a two-dimensional topological insulator. We study tunneling transport through helical edges of these holes and demonstrate that the band structure of such helical crystal can be controlled by both gate electrodes and external magnetic filed. For integer and half-integer values of dimensionless magnetic flux through the holes, the spectrum possesses Dirac points whose positions and velocities can be tuned by gates. The deviation of magnetic flux from these special values by $\delta \phi$ makes the Dirac cones massive, with the gap value $\Delta \propto |\delta \phi|$. At certain gate-dependent values of $\delta \phi$ different Dirac points converge to a double Dirac point and then disappear with further increase of $\delta \phi.$ Interaction between carriers may lead to strong renormalization of parameters $\alpha$ and $\beta$ controlling total tunnel coupling between holes and spin flip tunneling processes, respectively. We plot the renormalization flow in the plane $(\alpha,\beta)$ and demonstrate multicritical behavior of the crystal -- there is a multicritical fully unstable fixed point separating three different phases: independent rings, independent shoulders, and perfect spin-flip channels. We also find that defects in the crystal may lead to a formation of topologically protected qubits which are not destroyed by temperature and can be also manipulated both by gates and by magnetic field. The possibility of purely electrical high-temperature control of the qubits opens a wide avenue for applications in the area of quantum computing.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the chiral edge - state transport properties in these structures by studying the superlattices formed by periodically arranged etched holes (antidots) in two - dimensional topological insulators, and to show how to regulate the band structure of such chiral crystals through gate electrodes and external magnetic fields. Specifically: 1. **Regulating the band structure**: The paper shows how to control the band structure of chiral crystals through gate electrodes and external magnetic fields. In particular, for integer and half - integer magnetic flux quantum values, there are Dirac points in the spectrum, and their positions and velocities can be adjusted by the gate. 2. **The influence of magnetic flux deviation**: When the magnetic flux deviates from these special values, the Dirac cone becomes massive, that is, an energy gap is generated, and the energy gap size $\Delta$ is proportional to the magnetic flux deviation $|\delta\phi|$, that is, $\Delta\propto|\delta\phi|$. 3. **The formation and disappearance of multiple Dirac points**: As the magnetic flux further deviates, different Dirac points can converge into a double Dirac point, and then disappear as the magnetic flux continues to increase. 4. **The influence of interactions on parameters**: The interactions between carriers may lead to strong renormalization of the parameters $\alpha$ and $\beta$ of the total tunneling coupling and the spin - flip tunneling process. The author draws the renormalization flow diagram in the $(\alpha,\beta)$ plane, showing the multi - critical behavior of the crystal and separating three different phases: independent rings, independent shoulders and perfect spin - flip channels. 5. **Topologically protected qubits**: Defects in the crystal may lead to the formation of topologically protected qubits. These qubits will not be destroyed by temperature and can be manipulated by gates and magnetic fields. This provides the possibility for purely electrical control of qubits at high temperatures, thus opening up broad prospects for quantum computing applications. ### Formula summary - Energy gap caused by magnetic flux deviation: $\Delta\propto|\delta\phi|$ - Effective Hamiltonian near Dirac points: \[ H_{\text{eff}}^{(1)}=\begin{pmatrix} H_1&0\\ 0&H_2 \end{pmatrix} \] where, \[ H_1 = \delta v\cos\beta\sin\alpha\sigma_0+2\pi\delta\phi\cos\alpha\sin\beta\sigma_1+(2\pi\delta\phi\cos\beta + 2\delta q\sin\alpha)\sigma_3 \] \[ H_2=-\delta v\cos\beta\sin\alpha\sigma_0+2\pi\delta\phi\cos\alpha\sin\beta\sigma_1+(2\pi\delta\phi\cos\beta - 2\delta q\sin\alpha)\sigma_3 \] Through these studies, the paper reveals how to use the unique properties of chiral crystals to achieve precise control of electron transport and qubits, providing a theoretical basis for future quantum technology and the application of topological materials.

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