Valley-contrasting interband transitions and excitons in symmetrically biased dice model

Lei Hao

DOI: https://doi.org/10.1103/PhysRevB.104.195155

2023-04-26

Abstract:We study the exciton states in the symmetrically biased dice model, the electronic structures of which have an isolated flat band between two dispersive bands. At 1/3 or 2/3 filling, the model describes a two-dimensional semiconductor with the band edge at two degenerate valleys. Because of qualitative changes in the eigenvectors resulting from the bias term, the interband transition between the flat band and a dispersive band is valley contrasting under circularly polarized light. In terms of an effective-mass model and a realistic electron-hole interaction, we numerically calculate the spectrum and wave functions of the intravalley excitons, which are treated as Wannier-Mott excitons. We also discuss the fine structures of the exciton spectrum induced by the intravalley and intervalley exchange interactions. The symmetrically biased dice model thereby proves to be a new platform for valley-contrasting optoelectronics.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the exciton states and their properties formed in the symmetrically biased dice model due to the existence of an isolated flat band and a dispersion band between flat bands. Specifically:

1. **Model Background and Problem Definition**:
- The dice model is a two - dimensional lattice model, which contains three sub - lattices A, B, and C, and the inversion symmetry is broken by introducing a bias term, thus opening an energy gap in this model.
- When the filling fraction is 1/3 or 2/3, this model describes a two - dimensional semiconductor with two degenerate valleys.

2. **Inter - valley - contrasted inter - band transitions**:
- Due to the change of eigenvectors caused by the bias term, under the irradiation of circularly polarized light, the inter - band transitions between the flat band and the flat band exhibit valley - contrast characteristics. This valley - contrasted optical transition is similar to the phenomenon in a single - layer of transition metal dichalcogenides.

3. **Exciton research**:
- The paper numerically calculates the spectra and wave functions of excitons localized in the same valley using the effective mass model and the actual electron - hole interaction.
- The fine structure of the exciton spectra caused by the intra - valley exchange interaction and the inter - valley exchange interaction is studied.

4. **A new platform for valley - contrasted photoelectric effects**:
- The symmetrically biased dice model is thus proven to be a new research platform for valley - contrasted photoelectric effects, which provides a theoretical basis for exploring new photoelectric materials.

### Formula Summary

- **Hamiltonian**:
\[
\hat{H}=\sum_{\langle i,j\rangle,\sigma}(t_{ba}b^{\dagger}_{i\sigma}a_{j\sigma}+t_{bc}c^{\dagger}_{i\sigma}c_{j\sigma}+\text{H.c.})+\sum_{i,\sigma}(\varepsilon_a a^{\dagger}_{i\sigma}a_{i\sigma}+\varepsilon_c c^{\dagger}_{i\sigma}c_{i\sigma})
\]

- **Energy dispersion relation**:
\[
E_{\nu}(k)=\nu\sqrt{\Delta^{2}+2|\xi(k)|^{2}}
\]
where \(\xi(k)=t_0(e^{ik\cdot\delta_1}+e^{ik\cdot\delta_2}+e^{ik\cdot\delta_3})\).

- **Valley - contrasted transition matrix element**:
\[
\langle\psi_0(k)|\frac{1}{\sqrt{2}}(\frac{\partial h(k)}{\partial k_x}+i\eta\frac{\partial h(k)}{\partial k_y})|\psi_{\nu}(k)\rangle=\frac{\sqrt{3}a}{2\sqrt{2}|t_0|}[\text{sgn}(\Delta)+\nu\eta\tau]\frac{q_x + i\eta q_y}{q}
\]

Through these studies, the paper reveals the unique properties of valley - contrasted exciton states in the symmetrically biased dice model and provides theoretical support for the application of valleytronics.