Valley-contrasting interband transitions and excitons in symmetrically biased dice model

Lei Hao

DOI: https://doi.org/10.1103/PhysRevB.104.195155

2023-04-26

Abstract:We study the exciton states in the symmetrically biased dice model, the electronic structures of which have an isolated flat band between two dispersive bands. At 1/3 or 2/3 filling, the model describes a two-dimensional semiconductor with the band edge at two degenerate valleys. Because of qualitative changes in the eigenvectors resulting from the bias term, the interband transition between the flat band and a dispersive band is valley contrasting under circularly polarized light. In terms of an effective-mass model and a realistic electron-hole interaction, we numerically calculate the spectrum and wave functions of the intravalley excitons, which are treated as Wannier-Mott excitons. We also discuss the fine structures of the exciton spectrum induced by the intravalley and intervalley exchange interactions. The symmetrically biased dice model thereby proves to be a new platform for valley-contrasting optoelectronics.

Mesoscale and Nanoscale Physics,Materials Science