Simulations of Magnetization Reversal in FM/AFM Bilayers With THz Frequency Pulses

Joel Hirst,Sergiu Ruta,Jerome Jackson,Thomas Ostler

2023-04-26

Abstract:It is widely known that antiferromagnets (AFMs) display a high frequency response in the terahertz (THz) range, which opens up the possibility for ultrafast control of their magnetization for next generation data storage and processing applications. However, because the magnetization of the different sublattices cancel, their state is notoriously difficult to read. One way to overcome this is to couple AFMs to ferromagnets - whose state is trivially read via magneto-resistance sensors. Here we present conditions, using theoretical modelling, that it is possible to switch the magnetization of an AFM/FM bilayer using THz frequency pulses with moderate field amplitude and short durations, achievable in experiments. Consistent switching is observed in the phase diagrams for an order of magnitude increase in the interface coupling and a tripling in the thickness of the FM layer. We demonstrate a range of reversal paths that arise due to the combination of precession in the materials and the THz-induced fields. Our analysis demonstrates that the AFM drives the switching and results in a much higher frequency dynamics in the FM due to the exchange coupling at the interface. The switching is shown to be robust over a broad range of temperatures relevant for device applications.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to use terahertz (THz) - frequency pulses to achieve magnetization reversal in antiferromagnet (AFM) and ferromagnet (FM) bilayer structures. Specifically, the author hopes to show through theoretical modeling that magnetization reversal of the AFM/FM bilayer structure can be achieved under a moderate magnetic field amplitude and short duration, and to explore the influence of different parameters (such as interface coupling strength, FM layer thickness, etc.) on magnetization reversal.

### Key issues:
1. **High - speed magnetization dynamics of antiferromagnets (AFM)**:
- AFM materials have a high - frequency response (in the THz range), which makes it possible to control their magnetization ultrafast. However, because the magnetic moments of different sub - lattices cancel each other out, its state is difficult to read.

2. **Coupling between ferromagnets (FM) and antiferromagnets (AFM)**:
- By coupling AFM with FM, the state of FM can be easily read using a magnetoresistive sensor, and thus the state of AFM can be read indirectly. This method overcomes the problem that AFM itself is difficult to measure directly.

3. **Magnetization reversal driven by THz pulses**:
- Research shows that magnetization reversal of the AFM/FM bilayer structure can be achieved experimentally using THz - frequency pulses. The author shows that a consistent magnetization reversal phenomenon can be observed when the interface coupling strength and FM layer thickness are increased.

4. **The influence of temperature on magnetization reversal**:
- The paper also explores the influence of temperature on magnetization reversal, especially in the temperature range related to device applications, and verifies the robustness of magnetization reversal.

### Main conclusions:
- **Effectiveness of THz pulses**: Through THz - frequency pulses, magnetization reversal of the AFM/FM bilayer structure can be achieved under a moderate magnetic field amplitude and short duration.
- **Importance of interface coupling**: Increasing the interface coupling strength and FM layer thickness can significantly improve the effect of magnetization reversal.
- **Temperature dependence**: Magnetization reversal is still robust in a wide temperature range, but the required magnetic field strength is reduced at high temperatures.

### Formula summary:
- **Landau - Lifshitz - Gilbert (LLG) equation**:
\[
\frac{\partial S_i}{\partial t}=-\gamma_i\left(\frac{1 + \lambda_i^2}{\mu_i}\right)\left(S_i\times H_i+\lambda_i S_i\times S_i\times H_i\right)
\]
where \(S_i\) is the normalized spin unit vector, \(\lambda_i\) is the effective damping parameter, \(\gamma_i = 1.76\times 10^{-11}\) is the gyromagnetic ratio, \(\mu_i\) is the atomic magnetic moment, and \(H_i\) is the effective magnetic field acting on the spin.

- **Expression of the effective magnetic field**:
\[
H_i=\zeta_i(t)-\frac{\partial H}{\partial S_i}+B(t)
\]
where \(\zeta_i(t)\) describes the thermal bath coupling, and \(B(t)\) is the applied magnetic field.

- **Magnetic field equation of THz pulses**:
\[
B(t)=H\exp\left(-\frac{(t - t_0)^2}{2\sigma^2}\right)\sin(2\pi f(t - t_0))
\]
where \(H\) is the amplitude of the Gaussian envelope, \(\sigma\) is the standard deviation, and \(f\) is the pulse frequency.

These research results provide an important theoretical basis and technical support for the development of next - generation data storage and processing applications.