High dynamic range open-loop current measurement based on diamond quantum magnetometer achieving ppm scale precision

Qihui Liu,Hao Chen,Fei Xie,Yuqiang Hu,Jin Zhang,Nan Wang,Lihao Wang,Yichen Liu,Yang Wang,Zhichao Chen,Lingyun Li,Jiangong Cheng,Zhenyu Wu

2023-04-17

Abstract:Negatively charged nitrogen-vacancy (NV) centers in diamond have been extensively studied as a promising high sensitivity solid-state magnetic field sensor at room temperature. However, their use for current sensing applications is limited due to the challenge of integration and miniaturization of the diamond NV sensor. Here, we demonstrate an integrated NV sensor fabricated with standard microfabrication process. The sensor device incorporated with a toroidal magnetic yoke enables a high-precision wide range direct current sensing with galvanic isolation. The performance of the diamond NV current sensor in an open loop configuration has been investigated. A current measuring range of 0 A ~ 1000 A with an uncertainty of 46 ppm are achieved. Taking advantage of dual spin resonance modulation, temperature drift is suppressed to 10 ppm/K. This configuration opens new possibilities as a robust and scalable platform for current quantum sensing technologies.

Instrumentation and Detectors

What problem does this paper attempt to address?

### Problems Addressed by the Paper

The paper aims to address the issue of high-precision measurement of current sensors in industrial applications, particularly in fields such as electric vehicles, smart grids, and the chemical industry. Specifically, the paper proposes an integrated quantum magnetic sensor based on diamond nitrogen-vacancy (NV) centers for achieving high dynamic range open-loop current measurement.

### Main Contributions

1. **Integrated NV Sensor**:
- An integrated NV sensor was fabricated using standard microfabrication processes, characterized by high precision and a wide measurement range.
- Achieved a current measurement range from 0 A to 1000 A with an uncertainty of 46 ppm.

2. **Temperature Drift Suppression**:
- Effectively suppressed temperature drift through a dual-frequency modulation scheme, reducing the temperature drift coefficient to 10 ppm/K.

3. **Performance Evaluation**:
- Conducted a detailed evaluation of the sensor's sensitivity, linearity, hysteresis error, repeatability error, and uncertainty.
- Demonstrated superior performance metrics compared to commercial Hall current sensors.

Through these technical improvements, the study provides new possibilities for the practical application of current sensors, especially in chip current sensing, grid control systems, and electric vehicles.