Abstract:This paper demonstrates the learning of the underlying device physics by mapping device structure images to their corresponding Current-Voltage (IV) characteristics using a novel framework based on variational autoencoders (VAE). Since VAE is used, domain expertise is not required and the framework can be quickly deployed on any new device and measurement. This is expected to be useful in the compact modeling of novel devices when only device cross-sectional images and electrical characteristics are available (e.g. novel emerging memory). Technology Computer-Aided Design (TCAD) generated and hand-drawn Metal-Oxide-Semiconductor (MOS) device images and noisy drain-current-gate-voltage curves (IDVG) are used for the demonstration. The framework is formed by stacking two VAEs (one for image manifold learning and one for IDVG manifold learning) which communicate with each other through the latent variables. Five independent variables with different strengths are used. It is shown that it can perform inverse design (generate a design structure for a given IDVG) and forward prediction (predict IDVG for a given structure image, which can be used for compact modeling if the image is treated as device parameters) successfully. Since manifold learning is used, the machine is shown to be robust against noise in the inputs (i.e. using hand-drawn images and noisy IDVG curves) and not confused by weak and irrelevant independent variables.

What problem does this paper attempt to address?

The main objective of this paper is to present a new framework based on Variational Autoencoder (VAE) that can map the structural images of semiconductor devices to their corresponding Current-Voltage (IV) characteristics, thereby enabling the learning of the physical properties of the devices. Specifically, the research attempts to address the following issues: 1. **Mapping Device Structural Images to Electrical Characteristics**: Traditional methods typically rely on the electrical characteristics of the device (such as IV curves, capacitance-voltage curves, etc.) or the main parameters of the device structure (such as gate length) as inputs for Machine Learning (ML) algorithms. However, for novel devices, these main parameters may be difficult to extract from structural images, or some parameters may not be easily obtainable. Therefore, this paper attempts to directly use device structural images to predict their electrical characteristics. 2. **Inverse Design and Forward Prediction**: - **Inverse Design**: Given the desired IV characteristic curve, find a device structure to produce these characteristics. This is particularly important in the device design process, as engineers often need to design devices that meet specific current characteristics based on the requirements of circuit designers. - **Forward Prediction**: Predict the IV characteristics of a given device structure, which is very useful for understanding and simulating the behavior of novel devices, especially when the physical principles are not yet fully understood. 3. **No Need for Domain Expertise**: A key advantage of this framework is that it can be deployed without the need for domain expertise and can handle noisy data and irrelevant variables, thereby improving the robustness of the framework. 4. **Compact Modeling**: By using device images as input parameters instead of traditional physical parameters for compact models, traditional compact modeling methods can be extended. This approach is particularly suitable for novel devices that are not yet fully understood. In summary, the paper proposes a new method that uses Variational Autoencoder to map device structural images to IV characteristics, thereby achieving inverse design and forward prediction. This method aims to address the challenges faced by current technologies and provides new avenues for understanding and modeling novel devices.

Device Image-IV Mapping using Variational Autoencoder for Inverse Design and Forward Prediction

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