Abstract:The formation of moiré patterns in crystalline solids can be used to manipulate their electronic properties, which are fundamentally influenced by periodic potential landscapes. In two-dimensional materials, a moiré pattern with a superlattice potential can be formed by vertically stacking two layered materials with a twist and/or a difference in lattice constant. This approach has led to electronic phenomena including the fractal quantum Hall effect1–3, tunable Mott insulators4,5 and unconventional superconductivity6. In addition, theory predicts that notable effects on optical excitations could result from a moiré potential in two-dimensional valley semiconductors7–9, but these signatures have not been detected experimentally. Here we report experimental evidence of interlayer valley excitons trapped in a moiré potential in molybdenum diselenide (MoSe2)/tungsten diselenide (WSe2) heterobilayers. At low temperatures, we observe photoluminescence close to the free interlayer exciton energy but with linewidths over one hundred times narrower (around 100 microelectronvolts). The emitter g-factors are homogeneous across the same sample and take only two values, −15.9 and 6.7, in samples with approximate twist angles of 60 degrees and 0 degrees, respectively. The g-factors match those of the free interlayer exciton, which is determined by one of two possible valley-pairing configurations. At twist angles of approximately 20 degrees the emitters become two orders of magnitude dimmer; however, they possess the same g-factor as the heterobilayer at a twist angle of approximately 60 degrees. This is consistent with the umklapp recombination of interlayer excitons near the commensurate 21.8-degree twist angle7. The emitters exhibit strong circular polarization of the same helicity for a given twist angle, which suggests that the trapping potential retains three-fold rotational symmetry. Together with a characteristic dependence on power and excitation energy, these results suggest that the origin of the observed effects is interlayer excitons trapped in a smooth moiré potential with inherited valley-contrasting physics. This work presents opportunities to control two-dimensional moiré optics through variation of the twist angle.

Interplay of trapped species and absence of electron capture in Moiré heterobilayers

Optical Signatures of Moiré Trapped Biexcitons

Nature of long-lived moiré interlayer excitons in electrically tunable MoS$_{2}$/MoSe$_{2}$ heterobilayers

Moiré trions in MoSe2/WSe2 heterobilayers

Nature of Long-Lived Moiré Interlayer Excitons in Electrically Tunable MoS_2/MoSe_2 Heterobilayers

Bosonic Delocalization of Dipolar Moiré Excitons

Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers

Field-Induced Hybridization of Moiré Excitons in Heterobilayers

Confined Trions and Mott-Wigner States in a Purely Electrostatic Moiré Potential

Non-linear and negative effective diffusivity of optical excitations in moiré-free heterobilayers

Optical read-out of Coulomb staircases in a moiré superlattice via trapped interlayer trions

Hybrid moiré excitons and trions in twisted MoTe$_2$-MoSe$_2$ heterobilayers

Magnon‐Coupled Intralayer Moiré Trion in Monolayer Semiconductor–Antiferromagnet Heterostructures

Direct Visualization of Dark Interlayer Exciton Transport in Moiré Superlattices

Interaction of Moiré Excitons with Cavity Photons in Two-Dimensional Semiconductor Hetero-Bilayers

Nonlinear and Negative Effective Diffusivity of Interlayer Excitons in Moiré-Free Heterobilayers

Luminescence Anomaly of Dipolar Valley Excitons in Homobilayer Semiconductor Moiré Superlattices

One-Dimensional Moir\'e Excitons in Transition-Metal Dichalcogenide Heterobilayers

Distinct moiré trions in a twisted semiconductor homobilayer