Photogalvanic response in multi-Weyl semimetals

Arpit Raj,Swati Chaudhary,Gregory A. Fiete
DOI: https://doi.org/10.1103/PhysRevResearch.6.013048
2023-05-20
Abstract:We investigate the dependence of the photogalvanic response of a multi-Weyl semimetal on its topological charge, tilt, and chemical potential. We derive analytical expressions for the shift and injection conductivities for tilted charge-$n$ Weyl points $(n=1,2,3)$ using a low energy two-band effective Hamiltonian. For double-Weyl semimetals, we also compute the response from two-band and four-band tight-binding models with broken time-reversal symmetry to study the effect of band bending and the contributions from higher bands. We find a significant deviation in the responses obtained from the effective low-energy continuum model and more realistic four-band continuum and tight-binding models. We analyze several different limits of these models. We describe the nature of the deviations and provide estimates of their dependence on the frequency and other model parameters. Our analysis provides a simple explanation for the first-principle calculation based frequency dependence of the injection current in SrSi$_2$. Additionally, we find interesting parameter regimes where the frequency dependence of the non-linear optical response can be directly used to probe the type-I/type-II nature of the Weyl cone. We obtain analytical results for the charge-4 Weyl semimetal by reducing the original problem involving a triple $k$-space integral to one with only a double integral. This simplification allows us to extract all relevant information about the nature of its second-order dc response and the precise condition for observing circular photogalvanic effect quantization. The semi-analytical approach presented here can also be extended to a systematic study of second harmonic generation and first-order optical conductivity in charge-4 Weyl semimetals.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
### What problems does this paper attempt to solve? This paper mainly explores the dependence of the photogalvanic response in multi - Weyl semimetals, especially its relationship with topological charge, tilt, and chemical potential. Specifically: 1. **Research background**: - **Quantum geometric effect**: The article points out that the quantum geometry (QG) of Bloch wave functions can significantly affect the electronic properties and response functions of materials, such as the quantum anomalous Hall effect. - **Bulk photovoltaic effect (BPVE)**: The paper specifically focuses on the bulk photovoltaic effect, which is a second - order optical response caused by the non - trivial Bloch wave function structure in non - centrosymmetric materials. 2. **Research objectives**: - **Analysis of the influence of different parameters**: The author aims to derive analytical expressions for describing the shift current and injection current, and analyze how these responses depend on the topological charge, tilt, and chemical potential of multi - Weyl semimetals. - **Model comparison**: By using the low - energy two - band effective Hamiltonian and more realistic four - band continuum and tight - binding models, study the deviations between different models. - **Frequency dependence**: Explore the influence of frequency and other model parameters on the photogalvanic response, especially the frequency - domain behavior in double - Weyl semimetals. - **Higher - order optical response**: Study the exact conditions for the second - order DC response in multi - Weyl semimetals and the quantization conditions for the circular photogalvanic effect (CPGE). 3. **Specific problems**: - **CPGE quantization**: Explain the simple reasons for the frequency dependence of the injection current in first - principles calculations, and explore the validity of the CPGE quantization conditions in different frequency windows. - **Unique properties of multi - Weyl semimetals**: Study multi - Weyl semimetals with higher Berry monopole charges (such as n = 4), simplify the problem involving triple k - space integrals to only double integrals to extract all relevant information. - **Experimental verification**: Provide theoretical basis to explain the phenomena observed in experimental results, such as the CPGE behavior in SrSi₂. Through the above research, the author hopes to provide a more in - depth theoretical basis for understanding the photogalvanic effect of multi - Weyl semimetals and provide guidance for future experimental design and applications. ### Key formulas - **Second - order DC response**: \[ j_{dc}^a=\sigma_{abc}(\omega)E_b(\omega)E_c(-\omega) \] where \(\sigma_{abc}(\omega)\) can be divided into the shift - current conductivity \(\sigma_{abc}^{\text{shift}}\) and the injection - current conductivity \(\sigma_{abc}^{\text{inj}}\). - **Shift - current conductivity**: \[ \sigma_{abc}^{\text{shift}}=-i\frac{\pi e^3}{\hbar^2}\int_k\sum_{n > m}f_{nm}(r_{nm}^br_{mn}^c; a - r_{mn}^cr_{nm}^b; a)\delta(\omega_{nm}-\omega) \] - **Injection - current conductivity**: \[ \sigma_{abc}^{\text{inj}}=\tau\frac{2\pi e^3}{\hbar^2}\int_k\sum_{n > m}f_{nm}\Delta_{nm}^ar_{nm}^br_{mn}^c\delta(\omega_{nm}-\omega) \]