Abstract:We theoretically study magnetic ground states of doped zigzag graphene nanoribbons and the emergence of topological domain walls. Using the Hartree-Fock mean-field approach and an effective continuum model, we demonstrated that the carrier doping stabilizes a magnetic structure with alternating antiferromagnetic domains, where the doped carriers are accommodated in topological bound states localized at the domain wall. The energy spectrum exhibits a Hofstadter-like fractal spectral evolution as a function of the carrier density, where minigaps are characterized by the Chern number associated with the adiabatic charge pump in moving domain walls. A systematic analysis for nanoribbons with different widths revealed that the ferromagnetic domain-wall phase emerges in relatively wide ribbons, while the colinear domain-wall phase arises in narrower ribbons.

What problem does this paper attempt to address?

The problems that this paper attempts to solve are: in carrier - doped zigzag graphene nanoribbons (ZGNR), how the magnetic - ordered structure evolves and the formation mechanism of topological domain walls. Specifically, the research aims to explore the following aspects: 1. **Stability of the magnetic - ordered structure**: - When ZGNR is carrier - doped, whether its original antiferromagnetic (AFM) ordered structure can remain stable. - How the doped carriers affect the magnetic - ordered state of the system, especially the behavior under different doping concentrations. 2. **Formation of topological domain walls**: - How carrier doping leads to the formation of alternating AFM domains and ferromagnetic (FM) domain walls. - The properties of topological bound states at the domain walls and their influence on the electronic structure of the system. 3. **Evolution of the energy spectrum**: - How the energy spectrum of the system changes as the carrier density varies, especially the appearance of a fractal - like Hofstadter - butterfly - like spectrum structure. - Each energy gap can be characterized by the Chern number, which is related to the adiabatic movement of the domain walls. 4. **Width - dependence**: - What are the differences in the magnetic - ordered structures of ZGNRs with different widths under doping conditions. - Whether a collinear domain - wall phase will be formed in narrower ZGNRs instead of a ferromagnetic domain - wall phase. Through the research of these problems, the author hopes to reveal the influence of carrier doping on the magnetic and electronic properties of ZGNRs and provide a theoretical basis for the future design of spintronic devices. ### Main conclusions - **Under low - doping conditions**, alternating AFM domains and ferromagnetic domain walls are formed, and the doped carriers are localized in the topological bound states of the domain walls. - **Under high - doping conditions**, the domain - wall spacing becomes smaller and eventually transitions to the spin - density - wave and charge - density - wave phases. - In **wider ZGNRs** (such as N = 5, 6), the ferromagnetic domain - wall phase is relatively stable; while in **narrower ZGNRs** (such as N ≤ 4), they tend to form a collinear domain - wall phase. - The **energy spectrum** shows a complex fractal structure as the doping density changes, similar to the Hofstadter - butterfly diagram, and each energy gap can be characterized by the Chern number. These results not only deepen the understanding of the magnetic and topological properties of ZGNRs but also provide new ideas for regulating their electronic properties.

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