Framework for engineering of spin defects in hexagonal boron nitride by focused ion beams

Madeline Hennessey,Benjamin Whitefield,Angus Gale,John A Scott,Mehran Kianinia,Igor Aharonovich,Milos Toth

2023-11-10

Abstract:Hexagonal boron nitride (hBN) is gaining interest as a wide bandgap van der Waals host of optically active spin defects for quantum technologies. Most studies of the spin-photon interface in hBN focus on the negatively charged boron vacancy (VB-) defect, which is typically fabricated by ion irradiation. However, VB- fabrication methods often lack robustness and reproducibility when applied to thin flakes (less than 10 nm) of hBN. Here we identify mechanisms that both promote and inhibit VB- generation and optimize ion beam parameters for site-specific fabrication of optically active VB- centers. We emphasize conditions accessible by high resolution focused ion beam (FIB) systems, and present a framework for VB- fabrication in hBN flakes of arbitrary thickness for applications in quantum sensing and quantum information processing.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to create optically active negatively - charged boron - vacancy (VB - ) defects in hexagonal boron nitride (hBN) by focused ion beam (FIB) to support quantum technology applications. Specifically, the research aims to improve the repeatability and robustness of VB - defect generation, especially in hBN materials with a thickness of less than 10 nanometers (thin flakes).

### Main problems and challenges

1. **Limitations of existing methods**:
- Currently, commonly - used VB - defect - creating methods (such as ion irradiation) lack stability and repeatability, especially when dealing with thin - flake hBN.
- These methods are easily affected by surface contaminants and other foreign atoms, resulting in VB - fluorescence quenching.

2. **Identification of key factors**:
- The research has found that two key factors affect the generation and quenching of VB - defects:
1. **Defect density**: The defect density generated in the hBN lattice.
2. **Recoil implantation**: Foreign atoms (such as carbon) are recoil - implanted into hBN during ion irradiation, suppressing the formation of VB - centers.

3. **Optimization of ion - beam parameters**:
- It is necessary to find appropriate ion - beam parameters (such as ion mass, energy, flux, and incident angle) to maximize VB - defect generation and minimize background emission and quenching effects.

### Solutions

The paper proposes a focused - ion - beam - based framework for optimizing VB - defect generation:

1. **Avoid recoil implantation**:
- Use clean, non - polluted hBN thin flakes, and try to use suspended thin flakes as much as possible to reduce the interaction with the substrate.
- Minimize ion mass and maximize ion energy to reduce the possibility of recoil implantation.

2. **Determine the optimal ion flux**:
- Experimentally determine the optimal ion flux to avoid excessive defect density and quenching effects while generating a sufficient number of VB - defects.

3. **Minimize sputtering effects**:
- Select appropriate ion mass and energy to reduce sputtering damage to hBN thin flakes.

4. **Optimize spatial resolution**:
- For applications requiring high spatial resolution, avoid using too - low ion energy and too - high incident angles to ensure the positional accuracy of the ion beam.

Through these measures, this framework can significantly improve the reliability and repeatability of VB - defect generation, thereby promoting the development of hBN - based quantum sensing and information - processing technologies.