Abstract:<p>The evolution of wide bandgap semiconductor materials has led to dramatic improvements for electronic applications at high powers and temperatures. However, the propensity of extended defects provides significant challenges for implementing these materials in commercial electronic and optical applications. While a range of spectroscopic and microscopic tools have been developed for identifying and characterizing these defects, such techniques typically offer either technique exclusively, and/or may be destructive. Scattering‐type scanning near‐field optical microscopy (s‐SNOM) is a nondestructive method capable of simultaneously collecting topographic and spectroscopic information with frequency‐independent nanoscale spatial precision (≈20 nm). Here, how extended defects within 4H‐SiC manifest in the infrared phonon response using s‐SNOM is investigated and the response with UV‐photoluminescence, secondary electron and electron channeling contrast imaging, and transmission electron microscopy is correlated. The s‐SNOM technique identifies evidence of step‐bunching, recombination‐induced stacking faults, and threading screw dislocations, and demonstrates interaction of surface phonon polaritons with extended defects. The results demonstrate that phonon‐enhanced infrared nanospectroscopy and spatial mapping via s‐SNOM provide a complementary, nondestructive technique offering significant insights into extended defects within emerging semiconductor materials and devices and thus serves as an important diagnostic tool to help advance material growth efforts for electronic, photonic, phononic, and quantum optical applications.</p>

Atomic resolution mapping of localized phonon modes at grain boundaries

Nanoscale Localized Phonons at Al2O3 Grain Boundaries

Direct Visualization of Localized Vibrations at Complex Grain Boundaries

Direct Visualization of Thermal Conductivity Suppression Due to Enhanced Phonon Scattering Near Individual Grain Boundaries

Nanoscale imaging of phonon dynamics by electron microscopy

Space- and Angle-Resolved Vibrational Spectroscopy to Probe the Local Phonon Modes at Planar Defects

Atomic-scale measurement of localized dislocation phonons at Si/Ge interface

Simultaneous excitation of phonons at the center and boundaries of Brillouin zones with high energy electron beams

Atomic-scale tunable phonon transport at tailored grain boundaries

Exploiting Phonon‐Resonant Near‐Field Interaction for the Nanoscale Investigation of Extended Defects

Single-defect phonons imaged by electron microscopy

Single-atom-resolved vibrational spectroscopy of a dislocation

Time- and momentum-resolved phonon population dynamics with ultrafast electron diffuse scattering

Simulations of angle- and spatially-resolved vibrational electron energy loss spectroscopy for a system with a planar defect

Atomic-scale visualization of defect-induced localized vibrations in GaN

Nanoscale Imaging and Measurements of Grain Boundary Thermal Resistance in Ceramics with Scanning Thermal Wave Microscopy

Phonon Transmission at Crystalline-Amorphous Interfaces Studied Using Mode-Resolved Atomistic Green's Functions

Pinching and Probing of Polygonal Grain Boundaries

Systematic Absences of Optical Phonon Modes in Phonon Dispersion Measured by Electron Microscopy

Phononic thermal transport along graphene grain boundaries

Investigating Thermal Behavior of Surface Phonon in SiC by In-Situ Vibrational Spectroscopy