In-Plane-Gate Transparent $\hbox{SnO}_{2}$ Nanowire Transistors

Huixuan Liu,Qing Wan
DOI: https://doi.org/10.1109/LED.2012.2214372
IF: 4.8157
2012-10-02
IEEE Electron Device Letters
Abstract:In-plane-gate transparent SnO<sub>2</sub> nanowire transistors gated by SnO<sub>2</sub>-based solid electrolytes are fabricated on glass substrate at room temperature. Low-voltage (1.0 V) operation of such device is realized due to the large electric-double-layer capacitance of 0.75 μF/cm<sup>2</sup> at 20 Hz. The subthreshold slope, current on/off ratio, and field-effect mobility of the in-plane-gate transparent nanowire transistors are estimated to be 92 mV/decade, >; 10<sup>5</sup>, and 106.8 cm<sup>2</sup>/V · s, respectively. Such low-voltage in-plane-gate transparent nanowire transistors are promising for portable invisible sensors.
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