Design of Plasmonic Modulators With Vanadium Dioxide on Silicon-on-Insulator

Miao Sun,W. Shieh,R. Unnithan
DOI: https://doi.org/10.1109/JPHOT.2017.2690448
IF: 2.4
2017-06-01
IEEE Photonics Journal
Abstract:We present design of plasmonic modulators using vanadium dioxide (VO<sub>2</sub>) as modulating material realized on silicon-on-insulator (SOI) wafer with only 200 nm × 140 nm modulating section within 1 <italic>μ </italic>m × 3 <italic>μ</italic>m device footprint. By utilising the large refractive index contrast between the metallic and semiconductor phases of VO<sub>2</sub>, the modulator can achieve a broad working wavelength range from 1100 to 1800 nm around C-band, with a high modulation depth of 21.5 dB/<italic>μ</italic>m. We also analyse effects of using seed layer of different dielectric materials for growing VO<sub>2</sub> on modulation index by exploring the mixed combination of VO<sub>2</sub> and different dielectric materials. Our device geometries can have potential applications in the development of next-generation miniaturised high-frequency optical modulators in silicon photonics for optical communications.
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