Multilayer graphene electro-absorption optical modulator based on double-stripe silicon nitride waveguide.

Meiyong Fan,Huimin Yang,Pengfei Zheng,Guohua Hu,Binfeng Yun,Yiping Cui
DOI: https://doi.org/10.1364/OE.25.021619
IF: 3.8
2017-09-04
Optics Express
Abstract:A graphene electro-absorption optical modulator based on double-stripe silicon nitride waveguide is proposed and analyzed. By embedding four graphene layers in the double-stripe silicon nitride waveguide and the graphene layers co-electrode design, the total metal-graphene contact resistance can be reduced 50% and as high as 30.6GHz modulation bandwidth can be achieved theoretically. The calculated extinction ratio and figure of merit are 0.1658dB/um and 9.7, respectively. And the required switching voltage from its minimum to maximum absorption state is 3.8180V and 780.50fJ/bit power consuming can be achieved. The proposed modulator can remedy the lack of high speed modulator on the passive silicon nitride waveguide.
What problem does this paper attempt to address?