Lattice vibrational modes in changchengite from Raman spectroscopy and first principles electronic structure

B. Chatterjee,D. Vengust,A. Mrzel,P.Sutar,E. Goreshnik,J. Mravlje,T. Mertelj
DOI: https://doi.org/10.1002/jrs.6491
2022-12-22
Abstract:We measured room-temperature phonon Raman spectra of changchengite (IrBiS) and compared the experimental phonon wavenumbers to the theoretical ones obtained by means of the \emph{ab initio} density-functional-theory calculations in the presence and absence of the spin-orbit coupling effects. Combining two different excitation photon energies all the symmetry predicted Raman modes are experimentally observed. The electronic properties of IrBiS are found to be similar to the recently studied isostructural compound IrBiSe showing a large Dresselhaus spin-orbit valence band splitting. A good agreement between the experimental and theoretically predicted Raman phonon wavenumbers is found only when the lattice parameter is constrained to the experimental value. The inclusion of the spin orbit coupling does not significantly affect the phonon wavenumbers.
Materials Science
What problem does this paper attempt to address?
The main problem that this paper attempts to solve is to study the lattice vibration modes and electronic properties of iridium bismuth sulfide (IrBiS) through Raman spectroscopy experiments and first - principles - based electronic structure calculations. Specifically, the author hopes to solve this problem through the following aspects of work: 1. **Measurement and comparison of Raman spectra**: The Raman spectra of iridium bismuth sulfide (IrBiS) were measured at room temperature, and the phonon wave numbers obtained from the experiment were compared with the theoretically predicted values. In the experiment, two different excitation photon energies (632.8 nm and 488 nm) were used to ensure that all symmetry - predicted Raman modes could be observed. 2. **Considering the spin - orbit coupling (SOC) effect**: Through density functional theory (DFT) calculations, the phonon wave numbers of iridium bismuth sulfide (IrBiS) were calculated with and without spin - orbit coupling, respectively. It was found that only when the lattice parameters were constrained to the experimental values, the theoretically predicted Raman phonon wave numbers were consistent with the experimental results. And the influence of the introduction of spin - orbit coupling on the phonon wave numbers was not significant. 3. **Exploring the characteristics of the electronic structure**: The electronic band structure of iridium bismuth sulfide (IrBiS) was studied, and it was found that it was similar to the isostructural compound IrBiSe, showing a large Dresselhaus spin - orbit splitting. This splitting led to the splitting of a fully spin - polarized hole pocket at the top of the valence band, similar to the situation in IrBiSe. ### Main conclusions - There are systematic differences between the experimentally measured Raman phonon wave numbers and the theoretically predicted values, mainly manifested as the theoretical values being softer. By constraining the lattice parameters to the experimental values, the differences between most of the theoretically calculated phonon wave numbers and the experimental values were reduced to within 3%. - The influence of spin - orbit coupling on the phonon wave numbers is small, but it has a certain hardening effect in some specific modes. - The electronic structure of iridium bismuth sulfide (IrBiS) shows characteristics similar to those of IrBiSe, with a large Dresselhaus spin - orbit splitting, which indicates that IrBiS may have potential value in spintronics applications. ### Formula representation - Classification of optical modes in Raman scattering: \[ \Gamma_{\text{optic}} = 3A+3_1E + 3_2E+8T \] where \(A\) is a non - degenerate fully symmetric representation, and \(E\) and \(T\) are double - and triple - degenerate representations, respectively. - Spin - orbit splitting in the electronic band structure: \[ \Delta_{\text{SOC}}\approx0.34\,\text{eV} \] These research results are not only helpful for understanding the physical properties of iridium bismuth sulfide (IrBiS), but also provide a theoretical basis for further exploring the applications of related materials in fields such as spintronics.