Abstract:With the rapid growth in the semiconductor industry, it is becoming critical to detect and classify increasingly smaller patterned defects. Recently machine learning, including deep learning, has come to aid in this endeavor in a big way. However, the literature shows that it is challenging to successfully classify defect types at the 6 nm node with 100% accuracy using low-cost and high-volume-manufacturing compatible optical imaging methods. Here we combine a convolutional neural network (CNN) with that of an optical imaging method called through-focus scanning optical microscopy (TSOM) to successfully classify patterned defects for the 6 nm node targets using simulated optical images at the 193 nm illumination wavelength. We demonstrate the successful classification of eight variations of the defects, including the 3 nm difference in the defect size in one dimension, which is over 50 times smaller than the illumination wavelength used.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is how to effectively detect and classify pattern defects at the 6 - nanometer node during the semiconductor manufacturing process. With the rapid development of the semiconductor industry, it has become crucial to detect and classify increasingly smaller pattern defects. However, it is challenging to achieve 100% accurate defect classification at the 6 - nanometer node using low - cost, high - volume manufacturing - compatible optical imaging methods. Specifically, the author combines the Convolutional Neural Network (CNN) and an optical imaging method called Through - Focus Scanning Optical Microscopy (TSOM) to improve the classification accuracy of pattern defects at the 6 - nanometer node. By simulating optical images under a 193 - nanometer illumination wavelength, the author demonstrates the successful classification of eight different types of defects, including defect size differences of only 3 nanometers in one - dimensional direction, which is more than 50 times smaller than the illumination wavelength used. ### Main problem summary: 1. **Detecting and classifying pattern defects at the 6 - nanometer node**: As semiconductor technology progresses, detecting and classifying smaller and smaller defects has become a key challenge. 2. **Improving classification accuracy**: It is difficult to achieve 100% classification accuracy at the 6 - nanometer node using traditional optical imaging methods. 3. **Combining deep learning and TSOM**: By combining the Convolutional Neural Network (CNN) with Through - Focus Scanning Optical Microscopy (TSOM), the ability to classify minute defects is enhanced. ### Solutions: - **Using TSOM to obtain additional optical information**: TSOM provides more three - dimensional information about the target by collecting a series of out - of - focus images, which helps to improve the accuracy of defect classification. - **Applying CNN for image classification**: The Convolutional Neural Network in deep learning is used to process and classify TSOM images, achieving higher classification accuracy. Through these methods, the author demonstrates the successful classification of eight different types of defects at the 6 - nanometer node, including subtle size differences, thus providing feasibility for future defect detection and classification at even smaller nodes (such as 4 - nanometer).

Application of Convolutional Neural Network to TSOM Images for Classification of 6 nm Node Patterned Defects

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