Surface-dominated conductance scaling in Weyl semimetal NbAs

Sushant Kumar,Yi-Hsin Tu,Luo Sheng,Nicholas A. Lanzillo,Tay-Rong Chang,Gengchiau Liang,Ravishankar Sundararaman,Hsin Lin,Ching-Tzu Chen

DOI: https://doi.org/10.1038/s41524-024-01263-0

2024-05-04

Abstract:Protected surface states arising from non-trivial bandstructure topology in semimetals can potentially enable new device functionalities in compute, memory, interconnect, sensing, and communication. This necessitates a fundamental understanding of surface-state transport in nanoscale topological semimetals. Here, we investigate quantum transport in a prototypical topological semimetal NbAs to evaluate the potential of this class of materials for beyond-Cu interconnects in highly-scaled integrated circuits. Using density functional theory (DFT) coupled with non-equilibrium Green's function (NEGF) calculations, we show that the resistance-area RA product in NbAs films decreases with decreasing thickness at the nanometer scale, in contrast to a nearly constant RA product in ideal Cu films. This anomalous scaling originates from the disproportionately large number of surface conduction states which dominate the ballistic conductance by up to 70% in NbAs thin films. We also show that this favorable RA scaling persists even in the presence of surface defects, in contrast to RA sharply increasing with reducing thickness for films of conventional metals, such as Cu, in the presence of surface defects. These results underscore the promise of topological semimetals like NbAs as future back-end-of-line (BEOL) interconnect metals.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The paper primarily investigates the quantum transport properties of the Weyl semimetal NbAs at the nanoscale and evaluates its potential as a material surpassing copper interconnects in future integrated circuits. Specifically, the study addresses the following key issues:

1. **Surface-dominated conductivity scaling effect**: The research found that at the nanoscale, the resistance-area (RA) product of NbAs thin films decreases with diminishing thickness, contrasting with the nearly constant RA product of ideal copper films. This anomalous scaling effect originates from the abundant surface conduction states in NbAs films, which can account for up to 70% of ballistic conductivity.

2. **Contribution of surface states to conductivity**: Using Density Functional Theory (DFT) and Non-Equilibrium Green's Function (NEGF) computational methods, researchers discovered that surface states contribute significantly more to the conductivity in thin NbAs than bulk states, especially when the film thickness is less than about 7 nanometers, where the surface states contribute at least 50% of the total conductivity.

3. **Impact of surface defects**: The study also shows that NbAs thin films maintain favorable RA scaling effects even in the presence of surface defects, which is different from traditional metals (such as copper) where RA would increase sharply under similar conditions.

4. **Comparison with other materials**: Compared to other topological semimetals like CoSi, NbAs has more topologically protected surface states, which gives it greater potential as a next-generation interconnect material for integrated circuits. Moreover, the surface state conductivity of NbAs is somewhat insensitive to line defects, further enhancing its appeal as a high-performance interconnect material.

In summary, the study reveals through theoretical calculations the unique electronic transport properties of Weyl semimetal NbAs at the nanoscale, particularly the dominant role of surface states and their robustness against surface defects, thereby providing important scientific evidence for exploring new high-performance interconnect materials.