Injection and nucleation of topological defects in the quench dynamics of the Frenkel-Kontorova model

Oksana Chelpanova,Shane P. Kelly,Giovanna Morigi,Ferdinand Schmidt-Kaler,Jamir Marino
DOI: https://doi.org/10.1209/0295-5075/ace27d
2023-08-25
Abstract:Topological defects have strong impact on both elastic and inelastic properties of materials. In this article, we investigate the possibility to controllably inject topological defects in quantum simulators of solid state lattice structures. We investigate the quench dynamics of a Frenkel-Kontorova chain, which is used to model discommensurations of particles in cold atoms and trapped ionic crystals. The interplay between an external periodic potential and the inter-particle interaction makes lattice discommensurations, the topological defects of the model, energetically favorable and can tune a commensurate-incommensurate structural transition. Our key finding is that a quench from the commensurate to incommensurate phase causes a controllable injection of topological defects at periodic time intervals. We employ this mechanism to generate quantum states which are a superposition of lattice structures with and without topological defects. We conclude by presenting concrete perspectives for the observation and control of topological defects in trapped ion experiments.
Statistical Mechanics,Quantum Gases,Pattern Formation and Solitons,Quantum Physics
What problem does this paper attempt to address?
The paper primarily explores how to controllably inject and expel topological defects (particularly incommensurate defects in lattices) in quantum simulators, and studies the dynamics and quantum effects of these defects. Specifically, the authors use the Frenkel-Kontorova (FK) model to simulate incommensurate phenomena in cold atom and ion crystal systems, and control the generation of these defects by rapidly changing system parameters (i.e., the "quenching" process). ### Main Research Content 1. **Controllable Injection of Topological Defects**: - Researchers found that by controlling the intensity of the external periodic potential and the mismatch parameter of the inter-particle distance, controllable injection of topological defects (such as incommensurability in lattices) can be achieved in the FK model. - Topological defects are injected into the system from the boundary at controllable time intervals, forming a quantum superposition state containing both topological defects and defect-free structures. 2. **Non-equilibrium Dynamics**: - The paper analyzes how non-equilibrium dynamics affect the system's response during the quenching process from the commensurate phase to the incommensurate phase. - Special attention is given to how quantum fluctuations influence the generation of topological defects in quenching scenarios near the phase transition boundary. 3. **Experimental Realization**: - The paper discusses how to realize the above theoretical predictions in actual ion trap experiments, including achieving the required periodic potential through optical lattices and adjusting system parameters. - Several possible experimental observation methods are proposed, such as using far-field measurement techniques or the AC-Stark shift method to distinguish different configurations. 4. **Quantum Effects of Topological Defects**: - During the quenching process near the phase transition boundary, quantum fluctuations allow the system to tunnel through energy barriers, thereby generating topological defects in situations that are classically impossible. - These quantum effects are simulated using a semiclassical approximation (truncated Wigner approximation), demonstrating the generation of quantum superposition states. ### Experimental Outlook - This work is not only applicable to ion trap systems but may also be extended to other quantum simulation platforms, such as cold atom systems. - The long-term goal is to achieve nanoscale control of topological defects in real materials, controllably influencing material properties through the application of high-field optical potentials. This paper provides a new perspective for understanding and controlling topological defects in low-dimensional quantum simulators and lays the foundation for future developments in materials science and quantum information science.