Abstract:We propose a technique of Raman spectroscopy to characterize the excitonic nature and to evaluate the relative contribution of the two kinds of electron/exciton–phonon interactions that are observed in two-dimensional transition-metal dichalcogenides (TMDCs). In the TMDCs, the electron/exciton–phonon interactions mainly originate from the deformation potential (DP) or the Fröhlich interaction (FI) which give the mutually different Raman tensors. Using a circularly polarized light, the relative proportion of the DP and the FI can be defined by the ratio of helicity-polarized intensity that is observed by MoS2. By this analysis, we show that the excitonic FI interaction gradually increases with decreasing temperature, contributes equally to DP at ∼230 K, and dominates at lower temperatures. The excitonic effect in the Raman spectra is confirmed by modulating the dielectric environment for the exciton and by changing the laser power.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.0c04467?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.0c04467</a>.Notes S1–S5: The calculation process of the polarization selection rule for the E2g1 mode and A1g mode of MoS2 and the T2g mode of silicon; the expressions for the coupling strength of the FI and the DP; the dielectric screening effect on the exciton. Figures S1–S13, Table S1: comparison between Raman spectra taken with and without the selective collection of the helicity; linear polarization-resolved Raman spectra of MoS2; the intensity of the A1g mode of MoS2 as a function of temperature; Raman intensities of the E2g1 mode under σ+σ+ and σ+σ– configurations with the variation of temperature; the variation of the helicity polarization ratio of the A1g mode as a function of temperature, dielectric constant and laser power; the peak fitting results and the assignments for the resonant Raman peaks of MoS2; thickness measurement of h-BN used in the heterostructure; the extracted intensities of the E2g1 mode of MoS2 in heterostructures; helicity-resolved Raman spectra and the helicity polarization ratio for MoS2 with different layer numbers; change of peak position for the A1gmode as a function of laser power (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.0c04467/suppl_file/nn0c04467_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Raman Scattering with infrared excitation resonant with MoSe$_2$ indirect band gap

Raman scattering excitation in monolayers of semiconducting transition metal dichalcogenides

Direct Observation of Intravalley Phonon Scattering of 2s Excitons in MoSe$_2$ and WSe$_2$ Monolayers

Raman scattering in few-layer MoTe$_{2}$

Resonance Raman studies on phonon softening, phonon lifetime, Fano resonance, and multipeak analysis of MoS2 nanoflakes

Low-Frequency Raman Modes and Electronic Excitations In Atomically Thin MoS2 Crystals

Raman scattering and anomalous Stokes anti-Stokes ratio in MoTe2 atomic layers

Tip-enhanced Raman scattering and near-field optical imaging of semiconducting monolayer and few-layer MoTe 2

Double Resonance Raman Modes in Monolayer and Few-Layer Mote2

Resonant Raman Study of Trigonal Se

Raman modes of MoS2 used as fingerprint of van der Waals interactions in 2-D crystal-based heterostructures.

Indirect exciton-phonon dynamics in MoS2 revealed by ultrafast electron diffraction

Newly observed first-order resonant Raman modes in few-layer MoS$_2$

Davydov splitting and excitonic resonance effects in Raman spectra of few-Layer MoSe2

Gate-Tunable Resonant Raman Spectroscopy of Bilayer MoS2.

High-yield helicity-resolved Raman scattering with in-plane propagation of light in monolayer MoS 2

Characterization of Excitonic Nature in Raman Spectra Using Circularly Polarized Light

Electrostatically Enhanced Electron–Phonon Interaction in Monolayer 2H-MoSe 2 Grown by Molecular Beam Epitaxy

Moiré phonons in twisted MoSe 2 –WSe 2 heterobilayers and their correlation with interlayer excitons

Raman scattering excitation spectroscopy in monolayer WS$_2$