Silicon-based spectrally selective emitters with good high-temperature stability on stepped metasurface
Yu Zhu,Guozhi Hou,Qingyuan Wang,Ting Zhu,Teng Sun,Jun Xu,Kun Ji Chen
DOI: https://doi.org/10.1039/d2nr02299k
IF: 6.7
2022-07-07
Nanoscale
Abstract:Solar thermophotovoltaic (STPV) system has attracted increasing attention due to its great prospects for breaking Shockley-Queisser limit. As the critical component of high-performance STPV systems, spectrally selective emitter with good stability under high temperature is one of the main research challenges. In this study, we developed a hybrid silicon-based metasurface emitter with spectral selectivity and high temperature stability using simple fabrication process, by introducing controlled silicon nitride (SiNx) layer on a silicon stepped nanopillar substrate coated with molybdenum (Mo). Thanks to the cooperative effect of cavity mode resonance and the interference effect of SiNx dielectric layer, our proposed silicon-based metasurface emitter achieves a broadband optical absorption of ~95% in the wavelength of 220-2000 nm, while effectively suppressing heat radiation to ~19% in the long wavelength range (˃5 μm). Moreover, the polarization-independence and angle-insensitivity behaviors are demonstrated in the emitters. Additionally, due to the existence of SiNx protection layer, this silicon-based metasurface emitter is experimentally proved to sustain its excellent spectral properties after ultra-high temperature treatments, including annealing at 1273 K in Ar atmosphere for 6 hrs, even at 1073 K in the air for 1 h, which offers an alternative candidate for application in actual STPV system.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry